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Atomic-Scale Mechanisms of Defect-Induced Retention Failure in Ferroelectrics

机译：铁电解中缺陷诱导的保留失效的原子级机制

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摘要

The ability to switch the ferroelectric polarization using an electric field makes ferroelectrics attractive for application in nanodevices such as high-density memories. One of the major challenges impeding this application, however, has been known as retention failure, which is a spontaneous process of polarization back-switching that can lead to data loss. This process is generally thought to be caused by the domain instability arising from interface boundary conditions and countered by defects, which can pin the domain wall and impede the back-switching. Here, using in situ transmission electron microscopy and atomic-scale scanning transmission electron microscopy, we show that the polarization retention failure can be induced by commonly observed nanoscale impurity defects in BiFeO3 thin films. The interaction between polarization and the defects can also lead to the stabilization of novel functional nanodomains with mixed-phase structures and head-to-head polarization configurations. Thus, defect engineering provides a new route for tuning properties of ferroelectric nanosystems.
机译：使用电场切换铁电偏振的能力使得铁电器在诸如高密度存储器的纳米型中的应用具有吸引力。然而，阻碍这种应用的主要挑战之一已被称为保留失败，这是一个可以导致数据丢失的极化背部切换的自发过程。通常认为该过程是由界面边界条件产生的域不稳定性并被缺陷抵消，该域不会引导畴壁并阻止背部切换。这里，使用原位透射电子显微镜和原子刻度扫描透射电子显微镜，我们表明可以通过BIFEO3薄膜中的常见观察到的纳米级杂质缺陷诱导偏振保留失效。偏振与缺陷之间的相互作用也可以导致具有混合相结构和头部偏振配置的新型功能纳米型的稳定性。因此，缺陷工程提供了一种新的铁电纳米系统调谐性能的新途径。

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