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首页> 外文期刊>Nano letters >Large Scale Two-Dimensional Flux-Closure Domain Arrays in Oxide Multilayers and Their Controlled Growth
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Large Scale Two-Dimensional Flux-Closure Domain Arrays in Oxide Multilayers and Their Controlled Growth

机译：大规模二维磁通盒闭合域氧化物多层和控制生长

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摘要

Ferroelectric flux-closures are very promising in high-density storage and other nanoscale electronic devices. To make the data bits addressable, the nanoscale flux-closures are required to be periodic via a controlled growth. Although flux-closure quadrant arrays with 180 degrees domain walls perpendicular to the interfaces (V-closure) have been observed in strained ferroelectric PbTiO3 films, the flux-closure quadrants therein are rather asymmetric. In this work, we report not only a periodic array of the symmetric flux-closure quadrants with 180 degrees domain walls parallel to the interfaces (H-closure) but also a large scale alternative stacking of the V- and H-closure arrays in PbTiO3/SrTiO3 multilayers. On the basis of a combination of aberration-corrected scanning transmission electron microscopic imaging and phase field modeling, we establish the phase diagram in the layer-by-layer two-dimensional arrays versus the thickness ratio of adjacent PbTiO3 films, in which energy competitions play dominant roles. The manipulation of these flux-closures may stimulate the design and development of novel nanoscale ferroelectric devices with exotic properties.
机译：铁电通量封闭件在高密度存储和其它纳米级电子设备很有希望的。为了使数据比特寻址，纳米级磁封闭件需要通过受控生长为周期性的。尽管具有180周畴壁通量闭合象限阵列垂直于所述接口（V-闭合）已经在紧张强电介质钛酸铅膜，通量闭合象限内是相当不对称的被观察到。在这项工作中，我们报告不仅与平行于接口180度畴壁（H-闭合）对称磁通闭合象限的周期性阵列，而且在钛酸铅的V-和H-闭合阵列的大规模替代堆叠/钛酸锶多层。上像差校正扫描透射电子显微成像和相位场建模的组合的基础上，我们建立在层 - 层二维阵列与相邻的钛酸铅薄膜的厚度比率相图，其中能量竞赛玩占主导地位的角色。这些焊剂封闭件的操纵可以刺激异国性质的新颖的纳米级的铁电装置的设计和开发。

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