• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nanotechnology >Wafer-scale nanofabrication of sub-100 nm arrays by deep-UV displacement Talbot lithography
【24h】

Wafer-scale nanofabrication of sub-100 nm arrays by deep-UV displacement Talbot lithography

机译：深紫色位移Talbot光刻晶圆级纳米级亚峰阵列

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In this manuscript, we demonstrate the potential of replacing the standard bottom anti-reflective coating (BARC) with a polymethylglutarimide (PMGI) layer for wafer-scale nanofabrication by means of deep-UV displacement talbot lithography (DTL). PMGI is functioning as a developable non-UV sensitive bottom anti-reflective coating (DBARC). After introducing the fabrication process using a standard BARC-based coating and the novel PMGI-based one, the DTL nanopatterning capabilities for both coatings are compared by means of the fabrication of etched nanoholes in a dielectric layer and metal nanodots made by lift-off. Improvement of DTL capabilities are attributed to a reduction of process complexity by avoiding the use of O-2 plasma etching of the BARC layer. We show the capacity of this approach to produce nanoholes or nanodots with diameters ranging from 95 to 200 nm at a wafer-scale using only one mask and a proper exposing dose. The minimum diameter of the nanoholes is reduced from 118 to 95 nm when using the PMGI-based coating instead of the BARC-based one. The possibilities opened by the PMGI-based coating are illustrated by the successful fabrication of an array of nanoholes with sub-100 nm diameter for GaAs nanowire growth on a 2 '' GaAs wafer, a 2 '' nanoimprint lithography (NIL) master stamp, and an array of Au nanodots made by lift-off on a 4 '' silica wafer. Therefore, DTL possess the potential for wafer-scale manufacturing of nano-engineered materials.
机译：在该稿件中，我们证明了通过深紫色位移Talbot光刻（DTL）用聚甲基戊酰亚胺（PMGI）层用聚甲基戊酰亚胺（PMGI）层替换标准底抗反射涂层（BARC）。 PMGi用作可显影的非UV敏感底抗反射涂层（DBarc）。在使用标准条形的涂层和基于新的PMGI的基于PMGI的制造过程之后，通过在介电层中的蚀刻纳米孔的制造和通过剥离制成的金属纳米液中的制造来比较两种涂层的DTL纳米透射能力。通过避免使用条形层的O-2等离子体蚀刻来提高DTL能力的提高归因于减少过程复杂性。我们展示了这种方法生产纳米孔或纳米纸的能力，直径在晶片尺度上使用95至200nm，使用一个掩模和适当的暴露剂量。当使用基于PMGI的涂层而不是基于BARC的涂层时，纳米孔的最小直径从118〜95nm降低。通过基于PMGI的涂层开口的可能性通过成功制造具有SUB-100nm直径的纳米孔阵列，用于GaAs纳米线增长，在2'的GaAs晶片，A 2'纳米压印光刻（NIL）主邮票上，并且通过在4''二氧化硅晶片上剥离的AU纳米蛋白阵列。因此，DTL拥有纳米工程材料的晶片级制造的可能性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号