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首页> 外文期刊>Nanotechnology >Berezinskii-Kosterlitz-Thouless transition in an Al superconducting nanofilm grown on GaAs by molecular beam epitaxy
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Berezinskii-Kosterlitz-Thouless transition in an Al superconducting nanofilm grown on GaAs by molecular beam epitaxy

机译：Berzinskii-Kosterlitz-Thous在GaAs上生长的Al超导纳米丝的过渡，分子束外延在GaAs上生长

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摘要

We have performed extensive transport experiments on a 4 nm thick aluminum (Al) superconducting film grown on a GaAs substrate by molecular beam epitaxy (MBE). Nonlinear current-voltage (I-V) measurements on such a MBE-grown superconducting nanofilm show that V similar to I-3, which is evidence for the Berezinskii-Kosterlitz-Thouless (BKT) transition, both in the low-voltage (T-BKT 1.97 K) and high-voltage regions (T-BKT 2.17 K). In order to further study the two regions where the I-V curves are BKT-like, our experimental data are fitted to the temperature-induced vortices/antivortices unbinding model as well as the dynamical scaling theory. It is found that the transition temperature obtained in the high-voltage region is the correct T-BKT as confirmed by fitting the data to the aforementioned models. Our experimental results unequivocally show that I-V measurements alone may not allow one to determine T-BKT for superconducting transition. Therefore, one should try to fit one's results to the temperature-induced vortices/antivortices unbinding model and the dynamical scaling theory to accurately determine T-BKT in a two-dimensional superconductor.
机译：我们在通过分子束外延（MBE）在GaAs底物上生长的4nm厚的铝（Al）超导膜进行了广泛的运输实验。在这种MBE-生长的超导纳米膜上的非线性电流 - 电压（iv）测量显示V类似于I-3，这是Berzinskii-Kosterlitz-Thous（BKT）过渡的证据，无论是低压（T-BKT 1.97 k）和高压区域（T-BKT 2.17 K）。为了进一步研究I-V曲线是BKT的两个区域，我们的实验数据适用于温度诱导的涡旋/反恐解除模型以及动态缩放理论。发现在高压区域中获得的转变温度是通过将数据拟合到上述模型来确认的正确T-BKT。我们的实验结果明确表明单独的I-V测量可能不允许确定用于超导转变的T-BKT。因此，应该尝试将一个结果拟合到温度诱导的涡旋/反动不矛盾模型和动态缩放理论，以准确地确定二维超导体中的T-BKT。

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