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InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands

机译：在硅上生长的Ingaas / InP量子线，电信带的可调发射波长

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摘要

We report the growth of vertically stacked InGaAs/InP quantum wires on (001) Si substrates with adjustable room-temperature emission at telecom bands. Based on a self-limiting growth mode in selective area metal-organic chemical vapor deposition, crescent-shaped InGaAs quantum wires with variable dimensions are embedded within InP nano-ridges. With extensive transmission electron microscopy studies, the growth transition and morphology change from quantum wires to ridge quantum wells (QWs) have been revealed. As a result, we are able to decouple the quantum wires from ridge QWs and manipulate their dimensions by scaling the growth time. With minimized lateral dimension and their unique positioning, the InGaAs/InP quantum wires are more immune to dislocations and more efficient in radiative processes, as evidenced by their excellent optical quality at telecom-bands. These promising results thus highlight the potential of combining low-dimensional quantum wire structures with the aspect ratio trapping process for integrating III-V nano-light emitters on mainstream (001) Si substrates.
机译：我们报道了在电信带的可调室温发射的（001）Si基板上的垂直堆叠InGaAs / InP量子线的生长。基于选择性区域金属 - 有机化学气相沉积中的自限增长模式，具有可变尺寸的新月形INGAAS量子线嵌入INP纳米脊内。通过广泛的透射电子显微镜研究，已经揭示了从量子线到脊量子阱（QWS）的生长转变和形态变化。结果，我们能够通过缩放生长时间来从脊QWS与脊QWS的量子线解耦并通过缩放生长时间来操纵它们的尺寸。通过最小化的横向尺寸和它们独特的定位，InGaAs / InP量子线更加免受位错，并且在辐射过程中更有效，如它们在电信带的优异光学质量所证明。因此，这些有希望的结果突出了将低维量子线结构与纵横比捕获工艺组合的电位，用于将III-V纳米光发射器与主流（001）Si衬底上的III-V纳米光发射器集成。

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  • 来源
    《Nanotechnology》 |2018年第22期|共6页
  • 作者

    Han Yu; Li Qiang; Ng Kar Wei; Zhu Si; Lau Kei May;

  • 作者单位

    Hong Kong Univ Sci &

    Technol Dept Elect &

    Comp Engn Kowloon Hong Kong Peoples R China;

    Hong Kong Univ Sci &

    Technol Dept Elect &

    Comp Engn Kowloon Hong Kong Peoples R China;

    Univ Macau Inst Appl Phys &

    Mat Engn Ave Univ Macau Peoples R China;

    Hong Kong Univ Sci &

    Technol Dept Elect &

    Comp Engn Kowloon Hong Kong Peoples R China;

    Hong Kong Univ Sci &

    Technol Dept Elect &

    Comp Engn Kowloon Hong Kong Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 特种结构材料;
  • 关键词

    InP nano-ridges; III-V on Si; Si photonics; InGaAs quantum wires;

    机译：INP纳米脊;III-V在SI;SI PHOTONICS;INGAAS量子线;

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