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首页> 外文期刊>Nature reviews Cancer >Two-Dimensional Materials Inserted at the Metal/Semiconductor Interface: Attractive Candidates for Semiconductor Device Contacts
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Two-Dimensional Materials Inserted at the Metal/Semiconductor Interface: Attractive Candidates for Semiconductor Device Contacts

机译：插入金属/半导体界面的二维材料：用于半导体器件触点的有吸引力的候选者

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摘要

Metal-semiconductor junctions are indispensable in semiconductor devices, but they have recently become a major limiting factor precluding device performance improvement. Here, we report the modification of a metal/n-type Si Schottky contact barrier by the introduction of two-dimensional (2D) materials of either graphene or hexagonal boron nitride (h-BN) at the interface. We realized the lowest specific contact resistivities (rho(c)) of 3.30 n Omega cm(2) (lightly doped n-type Si, similar to 10(15)/cm(3)) and 1.47 n Omega cm(2) (heavily doped n-type Si, similar to 10(21)/cm(3)) via 2D material insertion are approaching the theoretical limit of 1.3 n Omega cm(2). We demonstrated the role of the 2D materials at the interface in achieving a low rho(c) value by the following mechanisms: (a) 2D materials effectively form dipoles at the metal-2D material (M/2D) interface, thereby reducing the metal work function and changing the pinning point, and (b) the fully metalized M/2D system shifts the pinning point toward the Si conduction band, thus decreasing the Schottky barrier. As a result, the fully metalized M/2D system using atomically thin and well-defined 2D materials shows a significantly reduced rho(c). The proposed 2D material insertion technique can be used to obtain extremely low contact resistivities in metal/n-type Si systems and will help to achieve major performance improvements in semiconductor technologies.
机译：金属半导体结在半导体器件中是必不可少的，但它们最近已成为预防装置性能改进的主要限制因素。这里，我们通过在界面处引入石墨烯或六边形氮化硼（H-Bn）的二维（2D）材料来报告金属/ n型Si肖特基接触屏障的修改。我们实现了3.30 nωcm（2）的最低特定接触电阻（rho（c））（类似于10（15）/ cm（3））和1.47 nωcm（2）（通过2D材料插入的重掺杂的N型Si，类似于10（21）/ cm（3）），接近1.3n Omega cm（2）的理论极限。我们通过以下机制证明了2D材料在界面处的作用：（a）2D材料在金属-2D材料（M / 2D）界面处有效形成偶极子，从而减少金属工作功能和改变钉扎点，（B）完全金属化的M / 2D系统将钉扎点移向Si导通带，从而降低了肖特基屏障。结果，使用原子薄和明确定义的2D材料的完全金属化M / 2D系统显示出显着减少的rhO（c）。所提出的2D材料插入技术可用于在金属/ N型Si系统中获得极低的接触电阻，并有助于实现半导体技术的主要性能改进。

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