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Friction-induced selective etching on silicon by TMAH solution

机译：TMAH溶液在硅上致摩擦诱导的选择性蚀刻

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摘要

Friction-induced selective etching provides a new thought direction in the field of nanotechnology with high resolution, low cost, flexibility and site control. In this work, it was found that the scratched area on a silicon surface can play a role as a mask against etching in tetramethyl ammonium hydroxide (TMAH) solution, resulting in the formation of protrusive hillocks. Friction-induced selective etching was found to depend on the temperature and etching time. The hillock height initially increased with the temperature or etching time, and then the hillock disappeared due to the mask etching off. In contrast, the applied normal load for scratching on silicon had little effect on the hillock height produced by selective etching in TMAH solution. Further analysis showed that crystal distortions or crystal amorphization could act as a mask against selective etching on silicon. Through control tip traces for scratching, different patterns can be produced on the silicon surface by friction-induced selective etching in TMAH solution. These results can enrich the fundamental aspects of scanning probe microscope (SPM)-based nanolithography, and provide an alternative method to produce nanostructures for various applications.
机译：摩擦诱导的选择性蚀刻在纳米技术领域具有高分辨率，成本低，灵活性和部位控制的新思路。在这项工作中，发现硅表面上的划痕区域可以在氢氧化铵（TMAH）溶液中以蚀刻的掩模起作用，导致突出的小丘的形成。发现摩擦诱导的选择性蚀刻取决于温度和蚀刻时间。丘陵高度最初随着温度或蚀刻时间而增加，然后由于掩模蚀刻，小丘消失了。相反，在硅上刮​​擦的施加的正常负荷对通过在TMAH溶液中选择性蚀刻产生的丘陵高度几乎没有影响。进一步的分析表明，晶体扭曲或晶体非晶化可以用作硅的选择性蚀刻的掩模。通过控制尖端迹线搔抓，不同的图案可在硅表面上通过在TMAH溶液摩擦引起的选择性蚀刻制造。这些结果可以丰富扫描探针显微镜（SPM）的纳米线的基本方面，并提供一种用于生产各种应用的纳米结构的替代方法。

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  • 来源
    《RSC Advances》 |2018年第63期|共6页
  • 作者

    Zhou Chao; Li Jiaming; Wu Lei; Guo Guangran; Wang Hongbo; Chen Peng; Yu Bingjun; Qian Linmao;

  • 作者单位

    Southwest Jiaotong Univ Minist Educ Key Lab Adv Technol Mat Tribol Res Inst Chengdu 610031 Sichuan Peoples R China;

    Southwest Jiaotong Univ Minist Educ Key Lab Adv Technol Mat Tribol Res Inst Chengdu 610031 Sichuan Peoples R China;

    Southwest Jiaotong Univ Minist Educ Key Lab Adv Technol Mat Tribol Res Inst Chengdu 610031 Sichuan Peoples R China;

    Southwest Jiaotong Univ Minist Educ Key Lab Adv Technol Mat Tribol Res Inst Chengdu 610031 Sichuan Peoples R China;

    Southwest Jiaotong Univ Minist Educ Key Lab Adv Technol Mat Tribol Res Inst Chengdu 610031 Sichuan Peoples R China;

    Southwest Jiaotong Univ Minist Educ Key Lab Adv Technol Mat Tribol Res Inst Chengdu 610031 Sichuan Peoples R China;

    Southwest Jiaotong Univ Minist Educ Key Lab Adv Technol Mat Tribol Res Inst Chengdu 610031 Sichuan Peoples R China;

    Southwest Jiaotong Univ Minist Educ Key Lab Adv Technol Mat Tribol Res Inst Chengdu 610031 Sichuan Peoples R China;

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