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Fabrication of nitrogen-doped ZnO nanorod arrays by hydrothermal synthesis and ambient annealing

机译：用水热合成和环境退火制备氮掺杂ZnO纳米棒阵列的制造

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摘要

Nitrogen-doped ZnO nanorod arrays (N:ZnO NRAs) were fabricated by hydrothermal synthesis using a zinc-ammine complex solution, followed by annealing at elevated temperatures under ambient conditions. After annealing at 400 degrees C for 1 h, Raman spectra indicated that nitrogen was incorporated in the ZnO crystal structure. NH3-ligands in the zinc-ammine complex precursor were incorporated in ZnO crystals during hydrothermal crystal growth and were then ruptured during annealing. Photoluminescence spectra indicated that during post-annealing, the nitrogen was incorporated into the oxygen site, which created accompanying defects such as oxygen vacancies and/or interstitial oxygen. The absorption edge in diffuse-reflectance UV-visible spectra revealed visible absorption after post-annealing. In addition, the N:ZnO NRAs generated strong visible-light-induced photocurrents. Nitrogen doping caused a decline in carrier density, as confirmed by an electrochemical Mott-Schottky plot. These results suggest that this cost-effective fabrication has many potential applications such as solar-induced water splitting.
机译：通过使用锌 - 氨基氨基络合物溶液的水热合成制备氮掺杂的ZnO纳米峰阵列（N：ZnO NRAS），然后在环境条件下在升高的温度下退火。在400℃下退火1小时后，拉曼光谱表明氮在ZnO晶体结构中掺入。在水热晶体生长期间在ZnO晶体中掺入锌 - 莫宁复合体前体中的NH 3-配体，然后在退火过程中破裂。光致发光光谱表明，在后退火过程中，氮气掺入氧部位，其产生伴随诸如氧空位和/或间质氧的缺陷。漫反射率UV可见光谱中的吸收边缘显示出退火后的可见吸收。此外，N：ZnO NRAS产生强烈的可见光诱导的光电流。氮掺杂引起载体密度下降，通过电化学Mott-肖特基图证实。这些结果表明，这种成本效益的制造具有许多潜在的应用，例如太阳能诱导的水分裂。

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  • 来源
    《RSC Advances》 |2018年第42期|共7页
  • 作者

    Kobayashi Ryosuke; Kishi Tetsuo; Katayanagi Yuta; Yano Tetsuji; Matsushita Nobuhiro;

  • 作者单位

    Tokyo Inst Technol Dept Mat Sci &

    Engn Sch Mat &

    Chem Technol Meguro Ku 2-12-1 Ookayama Tokyo 1528550 Japan;

    Tokyo Inst Technol Dept Mat Sci &

    Engn Sch Mat &

    Chem Technol Meguro Ku 2-12-1 Ookayama Tokyo 1528550 Japan;

    Gunma Univ Dept Technol Educ Fac Educ 4-2 Aramaki Machi Maebashi Gunma 3718510 Japan;

    Tokyo Inst Technol Dept Mat Sci &

    Engn Sch Mat &

    Chem Technol Meguro Ku 2-12-1 Ookayama Tokyo 1528550 Japan;

    Tokyo Inst Technol Dept Mat Sci &

    Engn Sch Mat &

    Chem Technol Meguro Ku 2-12-1 Ookayama Tokyo 1528550 Japan;

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  • 正文语种 eng
  • 中图分类 化学;
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