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Revealing the role of oxygen vacancies on the phase transition of VO2 film from the optical-constant measurements

机译：揭示氧空位在光常数测量中对VO2膜相变的作用

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摘要

Vanadium dioxide (VO2) material shows a distinct metal-insulator transition (MIT) at the critical temperature of approximate to 340 K. Similar to other correlated oxides, the MIT properties of VO2 is always sensitive to those crystal defects such as oxygen vacancies. In this study, we investigated the oxygen vacancies related phase transition behavior of VO2 crystal film and systematically examined the effect of oxygen vacancies from the optical constant measurements. The results indicated that the oxygen vacancies changed not only the electron occupancy on V 3d-O 2p hybrid-orbitals, but also the electron-electron correlation energy and the related band gap, which modulated the MIT behavior and decreased the critical temperature resultantly. Our work not only provided a facile way to modulate the MIT behavior of VO2 crystal film, but also revealed the effects of the oxygen vacancies on the electronic inter-band transitions as well as the electronic correlations in driving this MIT process.
机译：二氧化钒（VO2）材料在近似为340k的临界温度下显示出明显的金属 - 绝缘体转变（MIT）。类似于其他相关氧化物，VO2的MIT性质总是对诸如氧空位的那些晶体缺陷敏感。在这项研究中，我们研究了VO2晶体膜的氧空位相关相转变行为，并系统地检查了氧空位从光学常数测量的效果。结果表明，氧空位不仅改变了V 3D-O 2P混合轨道上的电子占用，而且改变了电子 - 电子相关能量和相关带隙，其调制了麻省理工学院行为并得到了显着的临界温度。我们的作品不仅提供了一种调制VO2晶体膜的麻省理工学院行为的便利方式，还揭示了氧空位对电子间歇转换的影响以及驱动该麻省理工学院工艺的电子相关性。

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  • 来源
    《RSC Advances》 |2018年第34期|共6页
  • 作者

    Fan Lele; Wang Xiangqi; Wang Feng; Zhang Qinfang; Zhu Lei; Meng Qiangqiang; Wang Baolin; Zhang Zengming; Zou Chongwen;

  • 作者单位

    Yancheng Inst Technol Key Lab Adv Technol Environm Protect Jiangsu Prov Yancheng 224051 Peoples R China;

    Univ Sci &

    Technol China Dept Phys Hefei 230026 Anhui Peoples R China;

    Yancheng Inst Technol Key Lab Adv Technol Environm Protect Jiangsu Prov Yancheng 224051 Peoples R China;

    Yancheng Inst Technol Key Lab Adv Technol Environm Protect Jiangsu Prov Yancheng 224051 Peoples R China;

    Yancheng Inst Technol Key Lab Adv Technol Environm Protect Jiangsu Prov Yancheng 224051 Peoples R China;

    Yancheng Inst Technol Key Lab Adv Technol Environm Protect Jiangsu Prov Yancheng 224051 Peoples R China;

    Nanjing Normal Univ Sch Phys Sci &

    Technol Nanjing 210023 Jiangsu Peoples R China;

    Univ Sci &

    Technol China Dept Phys Hefei 230026 Anhui Peoples R China;

    Univ Sci &

    Technol China Natl Synchrotron Radiat Lab Hefei 230029 Anhui Peoples R China;

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  • 正文语种 eng
  • 中图分类 化学;
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