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Pulsed DC magnetron sputtered titanium nitride thin films for localized heating applications in MEMS devices

机译:脉冲DC磁控磁控溅射钛氮化膜,用于MEMS器件中的局部加热应用

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Titanium nitride (TiN) thin films are deposited on Si/SiO2 substratesby using Pulsed DC magnetron sputtering and are characterized for their structural, mechanical and electrical properties for their application as localized heating elements in microsystem devices. The influence of substrate temperature on the properties of TiN films has been investigated. The correlation between the structural orientation with mechanical and electrical properties has been established. The films deposited at a substrate temperature of 300 degrees C have shown better structural, mechanical and electrical properties. This film has been chosen for the fabrication of microheater and its characterization. A maximum temperature of 250 degrees C is achieved by applying a power of 2.8 W to the microheater. (C) 2018 Elsevier B.V. All rights reserved.
机译:使用脉冲DC磁控溅射沉积氮化钛(锡)薄膜沉积在Si / SiO 2基材上,其特征在于它们的结构,机械和电性能,其应用于微系统装置中的局部加热元件。 研究了基础温度对锡膜性能的影响。 已经建立了具有机械和电性能的结构取向之间的相关性。 沉积在300℃的衬底温度下的薄膜显示出更好的结构,机械和电性能。 已选择该薄膜用于制造微热器及其表征。 通过将2.8W的功率施加到微热器来实现250℃的最大温度。 (c)2018年elestvier b.v.保留所有权利。

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