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An analytical model for the bending of radial nanowire heterostructures

机译：径向纳米线异质结构弯曲的分析模型

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摘要

Extremely thin nanowires (NWs) would bend during the heteroepitaxial growth process. This phenomenon can increase the emission intensity due to the strain fields within bent NWs. Although the growth mechanism of NW heterostructures has been widely studied in theory, the theoretical studies are centered on growth on the surface of straight NWs, and the bending mechanism on extremely thin NWs has not been clearly explored. In this contribution, we have established an analytical thermodynamic theory to study the mechanism of bending induced by heteroepitaxial growth on the surface of thin NWs. It is found that the balance between surface energy and elastic strain energy plays a crucial role in the determination of the bending of NWs. The strain relaxation energy induces bending of NWs with small radii and high deposited amounts, while the size-dependent surface energy becomes more significant and restrains the bending of NWs with large radii and low deposited amounts. The established theoretical model not only explained the bending mechanism of NWs but also provided useful information to design the epitaxial growth on the surface with a nanoscale curvature.
机译：极薄的纳米线（NWS）将在异质轴生长过程中弯曲。由于弯曲NWS内的应变场，这种现象可以增加发光强度。尽管NW异质结构的生长机制已经广泛研究了理论上，但理论研究以直线纱线表面的增长为中心，并且极其薄的NWS上的弯曲机制尚未明确探索。在这一贡献中，我们建立了分析热力学理论，以研究薄NWS表面上的异质轴生长诱导的弯曲机制。结果发现，表面能和弹性应变能量之间的平衡在确定NWS的弯曲中起着至关重要的作用。应变弛豫能量诱导具有小半径和高沉积量的NWS的弯曲，而尺寸依赖性表面能变得更加显着，并且抑制具有大的半径和低沉积量的NWS的弯曲。所建立的理论模型不仅解释了NW的弯曲机制，而且还提供了用纳米级曲率设计表面上外延生长的有用信息。

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