Growth of self-assembled nanostructures by molecular beam epitaxy

Goswami DK; Satpati B; Satyam PV; Dev BN

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Growth of self-assembled nanostructures by molecular beam epitaxy

机译：通过分子束外延生长自组装纳米结构

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A compact, custom-made molecular beam epitaxy (MBE) system has been installed and a commercial ultrahigh vacuum scanning tunnelling microscope (STM) has been coupled to the MBE chamber. Examples of growth of self-assembled nanostructures by MBE using this system and characterizations using reflection high energy electron diffraction, STM and high resolution transmission electron microscopy are presented.

机译：已经安装了紧凑的，定制的分子束外延（MBE）系统，并且已将商用超高真空扫描隧道显微镜（STM）连接到MBE腔室。给出了使用该系统通过MBE生长自组装纳米结构的示例，以及使用反射高能电子衍射，STM和高分辨率透射电子显微镜进行表征的例子。

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《Current Science: A Fortnightly Journal of Research》 |2003年第7期|共8页
作者
Goswami DK; Satpati B; Satyam PV; Dev BN;
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正文语种 eng
中图分类自然科学现状及发展;
关键词
Si(111) surfaces; Shape transition; Gold silicide; Quantum dots; Ge; Islands; Temperature; Nanocrystals; Transistors; Microscopy;

机译：Si（111）表面;形状转变;硅化金;量子点;Ge;岛;温度;纳米晶体;晶体管;显微学;

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1. Growth of self-assembled nanostructures by molecular beam epitaxy [J] . Goswami DK, Satpati B, Satyam PV, Current Science: A Fortnightly Journal of Research . 2003,第7期

机译：通过分子束外延生长自组装纳米结构
2. Influence of growth conditions on self-assembled InAs nanostructures grown on (001) InP substrate by Molecular beam epitaxy [J] . Y.F.Li, F.Lin, B.Xu, Journal of Crystal Growth . 2001,第4期

机译：生长条件对分子束外延在（001）InP衬底上生长的自组装InAs纳米结构的影响
3. Droplet epitaxy mediated growth of GaN nanostructures on Si (111) via plasma-assisted molecular beam epitaxy [J] . Fedorov V. V., Bolshakov A. D., Kirilenko D. A., CrystEngComm . 2018,第24期

机译：液滴外延介导GaN纳米结构在Si（111）上的生长通过等离子体辅助分子束外延
4. Growth of Self-Assembled Quantum Dots, Quantum Rings, and Lateral Bi-Quantum-Dot Molecules by Gas-Source Molecular Beam Epitaxy [C] . C. W. Tu, S. Suraprapapich, Y. M. Shen, Electrochemical Society . 2006

机译：通过气源分子束外延产生自组装量子点，量子环和横向双量子点分子的生长
5. Self-assembled nanostructures of group IV elements on germanium substrate by molecular beam epitaxy. [D] . Zhang, Jie. 2003

机译：通过分子束外延在锗衬底上自组装的IV族元素的纳米结构。
6. Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation [O] . SF Yoon, CY Liu, ZZ Sun, 2006

机译：自组装GaInNAs / GaAsN量子点激光器：固体源分子束外延生长和高温操作
7. Molecular beam epitaxy grown indium self-assembled plasmonic nanostructures [O] . Ricky Gibson, Michael Gehl, Jasmine Sears, 2015

机译：分子束外延生长铟自组装等离子体纳米结构
8. Application of the ALE (Atomic Layer Epitaxy) and MBE (Molecular Beam Epitaxy) Methods to the Growth of Layered Hg(1-x)Cd(x)Te Films [R] . Pessa, M. 1986

机译：aLE（原子层外延）和mBE（分子束外延）方法在层状Hg（1-x）Cd（x）Te薄膜生长中的应用

Growth of self-assembled nanostructures by molecular beam epitaxy

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