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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Ultrathin Ti/TiO2/BiVO4 nanosheet heterojunction arrays for photoelectrochemical water oxidation
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Ultrathin Ti/TiO2/BiVO4 nanosheet heterojunction arrays for photoelectrochemical water oxidation

机译：用于光电化学水氧化的超薄Ti / TiO2 / BIVO4纳米晶圆形阵列

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摘要

Bismuth vanadate (BiVO4) photoanode has attracted intensive attention recently due to its narrow band gap and suitable band edges. However, BiVO4 is suffered from slow charge transportation and short carrier diffusion length resulting a low energy conversion efficiency. Herein, we proposed a strategy for fabricating ultrathin Ti/TiO2/BiVO4 nanosheet heterojunction arrays by a sequential ionic layer adsorption reaction (SILAR) method depositing BiVO4 on top of Ti/TiO2 nanosheet arrays. The photocurrent of Ti/TiO2/BiVO4 photoanode prepared at the precursor concentration of 0.04 M is 1.2 mu A/cm(2) and increase to 5.8 mu A/cm(2) for that of 0.02 M. The ultrathin Ti/TiO2 nanosheet arrays possess an ideal surface area for coupling nanoscale BiVO4 as much as possible to construct heterojunction interfaces, which not only shorten the charge transfer pathway but also provide a flexible and strong conductive charge collector. Besides, the formation of heterojunctions between ultrathin TiO2 and BiVO4 favors the photoinduced electrons transfer from BiVO4 to TiO2 suppressing the recombination of photogenerated electron-hole pairs effectively. (C) 2018 Elsevier B.V. All rights reserved.
机译：钒酸铋（的BiVO4）光电阳极吸引最近密集关注，因为它窄的带隙和合适的带边缘。但是，的BiVO4从慢速充电运输和短载流子扩散长度产生的低能量转换效率受到影响。在此，我们提出了通过连续离子层吸附反应（SILAR）方法对Ti /二氧化钛纳米片阵列的顶部上沉积的BiVO4超薄的Ti / TiO2的/纳米片的BiVO4异质阵列的制造策略。钛/二氧化钛/光电阳极的BiVO4的光电流以0.04 M中的前体浓度制备为1.2亩A /厘米（2）和增加至5.8亩A /厘米（2），选择那些0.02 M.极薄的Ti / TiO2的纳米片阵列具有用于耦合的纳米级的BiVO4尽可能构建异质结界面，这不仅缩短了电荷转移通路，而且提供了一个灵活和强大的导电电荷收集器的理想的表面区域。此外，超薄TiO2和的BiVO4之间的异质结的形成有利于从的BiVO4光生电子转移到二氧化钛光生抑制电子 - 空穴对的再结合有效。 （c）2018年elestvier b.v.保留所有权利。

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