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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Tailoring optoelectronic properties of earth abundant ZnSnN2 by combinatorial RF magnetron sputtering
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Tailoring optoelectronic properties of earth abundant ZnSnN2 by combinatorial RF magnetron sputtering

机译：由组合RF磁控溅射剪裁地球丰富ZNSN2的光电性质

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Zn-IV-N-2 semiconductors are often considered as imminent materials alternative to InGaN and requisite thin film photovoltaic absorber materials for light harvesting due to its direct band gap, steep absorption onset and disorder-driven band gap tenability. In view of this, ZnSnN2 thin films were successfully prepared by reactive RF magnetron co-sputtering with different Sn concentrations at 450 degrees C substrate temperature. The films grown at 450 degrees C with different Sn target power were found to be orthorhombic crystal structure which has higher grain size (13-28 nm), low carrier density (-4.99 x 10(18) to -7.01 x 10(17) cm(-3)) and the maximum mobility (11.1 to 15.5 cm(2) V-1 s(-1)). The phase purity and chemical bonding states of ZnSnN2 were investigated by XPS analysis. Vibrational modes of ZnSnN2 confirmed the presence of N-bonding with Zn and Sn. The optical band gap decreased from 1.96 to 1.77 eV as the Sn power increased. Hence, it is suggested that ZnSnN2 thin film grown under this technique could be utilized as efficient absorber layer in thin film solar cells due to the astonishing optical and electrical properties. (C) 2018 Elsevier B.V. All rights reserved.
机译：的Zn-IV-N-2半导体通常被认为是由于其直接带隙替代InGaN和必要的薄膜光伏吸收体的光捕获材料迫在眉睫材料，陡吸收开始和病症驱动带隙调谐性。鉴于此，通过用在450摄氏度的衬底温度不同的Sn浓度的反应性RF磁控溅射共成功制备ZnSnN2薄膜。在450℃下具有不同的Sn目标功率生长的膜被发现是斜方晶体结构，其具有更高的晶粒尺寸（13-28纳米），低载流子密度（-4.99×10（18）-7.01×10（17）厘米（-3））和最大迁移率（11.1至15.5厘米（2）V-1秒（-1））。 ZnSnN2的相纯度和化学结合状态，通过XPS分析了研究。 ZnSnN2的振动模式确认的N-键合的与Zn和Sn的存在。作为Sn的功率增加的光学带隙从1.96下降到1.77电子伏特。因此，有人建议这种技术下生长ZnSnN2薄膜可以用作在薄膜太阳能电池效率的吸收层由于惊人光学和电学性质。 （c）2018年elestvier b.v.保留所有权利。

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