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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >High-performance GaN-based light emitting diodes grown on 8-inch Si substrate by using a combined low-temperature and high-temperature-grown AlN buffer layer
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High-performance GaN-based light emitting diodes grown on 8-inch Si substrate by using a combined low-temperature and high-temperature-grown AlN buffer layer

机译：通过使用组合的低温和高温生长的ALN缓冲层在8英寸Si衬底上生长的高性能GaN的发光二极管

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A combined buffer layer growth process was developed to grow crack-free GaN layers on 8-inch Si(111) wafers and so light-emitting diodes (LEDs). The combined buffer layer consisted of 2 nm-thick low-temperature (LT, 850 degrees C)-AlN, 8 nm-thick graded-temperature AlN, and 200 nm-thick high-temperature (HT, 1100 degrees C)-AlN layers. The X-ray diffraction (XRD) results showed that the LT-HT-AlN buffer layer exhibited better crystal quality than the HT-AlN buffer layer. The atomic force microscopy (AFM) images revealed that compared to the LT-HT-AlN buffer layer, the HT-AlN buffer layer had a rough surface with numerous bright spots, which correspond to N-polar AlN hillocks. Scanning electron microscopy (SEM) results showed many pits in the HT-AlN buffer layer. Transmission electron microscopy (TEM) results showed that the HT-AlN buffer layer contained about 1.3 nm-thick amorphous SixNy layer at the interface, while the LT-HT-AlN buffer layer showed a relatively smooth interface. It was further shown that using the LT-HT-AlN buffer layer, high-quality crack-free n-GaN layers (2.5 mm-thick) were grown on the 8-inch Si(111) substrate, which was confirmed by the XRD and cathodoluminescence results. Subsequently, packaged vertical LEDs (chip size: 1400 x 1400 mm(2)) grown on the LT-HT-AlN buffer layers showed higher light output power and chip yield than LEDs with the HT-AlN buffer layer. (C) 2017 Elsevier B.V. All rights reserved.
机译：开发了一种组合的缓冲层生长过程，以在8英寸Si（111）晶片等发光二极管（LED）上生长无裂缝GaN层。组合的缓冲层由2nm厚的低温（LT，850℃）-aln，8nm厚的分级温度Aln和200nm厚的高温（HT，1100℃）-aln层组成。 X射线衍射（XRD）结果表明，LT-HT-ALN缓冲层表现出比HT-ALN缓冲层更好的晶体质量。目的力显微镜（AFM）图像显示，与LT-HT-ALN缓冲层相比，HT-ALN缓冲层具有粗糙的表面，具有许多明显的斑点，其对应于N极性ALN Hillocks。扫描电子显微镜（SEM）结果显示HT-ALN缓冲层中的许多凹坑。透射电子显微镜（TEM）结果表明，HT-ALN缓冲层在界面处包含约1.3nm厚的无定形六元层，而LT-HT-ALN缓冲层显示相对平滑的界面。进一步表明，使用LT-HT-ALN缓冲层，在8英寸Si（111）衬底上生长了高质量的无裂缝N-GaN层（2.5mm厚），由XRD确认和阴极发光结果。随后，在LT-HT-ALN缓冲层上生长的垂直LED（芯片尺寸：1400×1400mm（2））显示出比具有HT-ALN缓冲层的LED的光输出功率和芯片产量更高。 （c）2017年Elsevier B.V.保留所有权利。

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