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首页> 外文期刊>Journal of Electronic Materials >Effects of GaAs Surface Treatment Processes on Photocurrent Properties of Cs/p-GaAs (001) Fabricated Using a MOCVD-NEA Multichamber System
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Effects of GaAs Surface Treatment Processes on Photocurrent Properties of Cs/p-GaAs (001) Fabricated Using a MOCVD-NEA Multichamber System

机译：GaAs表面处理方法对使用MOCVD-NEA MultiChers系统制造的CS / P-GaAs（001）的光电流性能的影响

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摘要

The effects of surface treatment processes of p-GaAs (001) on the photocurrent properties of Cs/p-GaAs (001) obtained during Cs evaporation have been investigated using a metal-organic chemical vapor deposition (MOCVD)-negative electron affinity (NEA) multichamber system comprising an MOCVD chamber, load-lock chamber, and NEA surface-activation chamber. Samples were transferred from the MOCVD chamber to the NEA surface-activation chamber without air exposure. Moreover, the air exposure time before Cs evaporation was controlled by opening the load-lock chamber. Almost the same peak photocurrents were observed for samples fabricated using only tertiarybutylarsine or H-2 supply after thermal cleaning of the p-GaAs substrate. However, tertiarybutylphosphine supply after thermal cleaning of the p-GaAs substrate degraded its surface morphology and decreased its peak photocurrent. The peak photocurrent decreased monotonically with lengthening air exposure time. Moreover, the start time of the rise in photocurrent was delayed monotonically with lengthening air exposure time. These experimental results reveal that the surface treatment process of p-GaAs (001) applied before Cs evaporation is an important factor controlling the photocurrent properties.
机译：使用金属 - 有机化学气相沉积（MOCVD） - 负电子亲和力（NEA，已经研究了P-GaAs（001）对Cs蒸发过程中得到的Cs / P-GaAs（001）的光电流性质的影响）多示例系统，包括MOCVD室，负载锁室和NEA表面激活室。将样品从MOCVD室转移到NEA表面活化室，而不会曝光。而且，通过打开负载锁定室来控制CS蒸发前的空气曝光时间。观察到几乎相同的峰值光电流用于使用仅在P-GaAs基板的热清洗后使用的叔丁烷胂或H-2供应制备的样品。然而，P-GaAs衬底热清洗后的叔丁基膦供给降低了其表面形态并降低了其峰值光电流。峰值光电流随着延长空气暴露时间单调而下滑。此外，光电流升高的开始时间单调延迟，延长空气暴露时间。这些实验结果表明，在CS蒸发之前施加的P-GaAs（001）的表面处理过程是控制光电流性质的重要因素。

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  • 来源
    《Journal of Electronic Materials》 |2019年第3期|共7页
  • 作者

    Fuchi Shingo; Sato Takayoshi; Idei Mikiya; Akiyama Yuuki; Nanai Yasushi;

  • 作者单位

    Aoyama Gakuin Univ Coll Sci &

    Engn Dept Elect Engn &

    Elect Chuo Ku 5-10-1 Fuchinobe Sagamihara Kanagawa 2525258 Japan;

    Aoyama Gakuin Univ Coll Sci &

    Engn Dept Elect Engn &

    Elect Chuo Ku 5-10-1 Fuchinobe Sagamihara Kanagawa 2525258 Japan;

    Aoyama Gakuin Univ Coll Sci &

    Engn Dept Elect Engn &

    Elect Chuo Ku 5-10-1 Fuchinobe Sagamihara Kanagawa 2525258 Japan;

    Aoyama Gakuin Univ Coll Sci &

    Engn Dept Elect Engn &

    Elect Chuo Ku 5-10-1 Fuchinobe Sagamihara Kanagawa 2525258 Japan;

    Aoyama Gakuin Univ Coll Sci &

    Engn Dept Elect Engn &

    Elect Chuo Ku 5-10-1 Fuchinobe Sagamihara Kanagawa 2525258 Japan;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 计量学;材料;
  • 关键词

    NEA; photocathode; GaAs; MOCVD; multichamber system;

    机译：NEA;光电阴极;GAAS;MOCVD;MULTICHAMBER系统;

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