...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Artificial twin-layer configurations of Zn(O,S) films by radio frequency sputtering in all dry processed eco-friendly Cu(In,Ga)Se-2 solar cells
【24h】

Artificial twin-layer configurations of Zn(O,S) films by radio frequency sputtering in all dry processed eco-friendly Cu(In,Ga)Se-2 solar cells

机译：通过射频溅射在所有干燥加工的环保Cu（IN，GA）SE-2太阳能电池中通过射频溅射进行人工双层膜膜

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Cu(In,Ga)Se-2 thin film solar cells are of great interest for research and industrial applications with their high conversion efficiencies, long-term stability and significant lifetimes. Such a solar cell of a p-n junction consists of p-type Cu(In, Ga)Se-2 films as a light absorber and n-type CdS as a buffer layer, which often emerges with intrinsic ZnO. Aimed at eco-friendly fabrication protocols, a large number of strategies have been investigated to fabricate a Cd-free n-type buffer layer such as Zn(O,S) in Cu(In,Ga)Se-2 solar cells. Also, if the Zn(O,S) films are prepared by coevaporation or sputtering, it will offer high compatibility with the preferred mass production. Here, we propose and optimize a dry method for Zn(O,S) deposition in a radio frequency sputtering. In particular, the strategy for the twin-layer configurations of Zn(O,S) films not only greatly improve their electrical conductance and suppress charge carrier recombination, but also avoid degradation of the Zn(O,S)/Cu(In,Ga)Se-2 interfaces. Indeed, the high quality of such twin Zn(O,S) layers have been reflected in the similar conversion efficiencies of the complete solar cells as well as the large short-circuit current density, which exceeds the CdS reference device. In addition, Zn(O, S) twin layers have reduced the production time and materials by replacing the CdS/i-ZnO layers, which removes two fabrication steps in the multilayered thin film solar cells. Furthermore, the device physics for such improvements have been fully unveiled with both experimental current-voltage and capacitance-voltage spectroscopies and device simulations via wxAMPS program. Finally, the proposed twin-layer Zn(O, S)/Cu(In,Ga)Se-2 interfaces account for the broadening of the depletion region of photogenerated charge carriers, which greatly suppress the carrier recombination at the space charge region, and eventually lead to the more efficient collection of charge carriers at both electrodes.
机译：Cu（河内）SE-2薄膜太阳能电池对研究和工业应用具有很大的兴趣，具有其高转化效率，长期稳定性和重要的寿命。 P-N结的这种太阳能电池由p型Cu（In，Ga）Se-2膜作为光吸收剂和N型CD作为缓冲层组成，其通常用内在ZnO出现。针对环保的制造方案，已经研究了大量策略，以制造无CD的N型缓冲层，例如Cu（In，Ga）Se-2太阳能电池中的Zn（O，S）。而且，如果通过共存或溅射制备Zn（O，S）膜，则它将与优选的批量生产提供高相容性。这里，我们提出并优化了射频溅射中的Zn（O，S）沉积的干法。特别地，Zn（O，S）薄膜的双层配置的策略不仅大大改善了它们的电导率和抑制电荷载体重组，而且避免了Zn（O，S）/ Cu的降解（在，Ga ）SE-2接口。实际上，这种双Zn（O，S）层的高质量反映在完整的太阳能电池的类似转换效率以及超过CD参考装置的情况下的大短路电流密度。另外，通过更换Cds / I-ZnO层，Zn（O，S）双层通过替换多层薄膜太阳能电池中的两个制造步骤来降低生产时间和材料。此外，这种改进的器件物理学已经通过Wxamps程序用实验电流 - 电压和电容 - 电压谱和装置模拟完全推出。最后，所提出的双层Zn（O，S）/ Cu（In，Ga）SE-2接口用于扩大光生电载流子的耗尽区域，这极大地抑制了空间电荷区域的载体重组，以及最终导致两个电极上更有效地收集电荷载体。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号