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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Interface characteristics and electrical transport of Ge/Si heterojunction fabricated by low-temperature wafer bonding
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Interface characteristics and electrical transport of Ge/Si heterojunction fabricated by low-temperature wafer bonding

机译：低温晶片粘合法制造的GE / SI异质结的界面特性和电气传输

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摘要

We report a promising method for oxide-layer-free germanium (Ge)/silicon (Si) wafer bonding based on an amorphous Ge (a-Ge) intermediate layer between Si and Ge wafers. The effect of the exposure time (t(e)), during which the a-Ge is exposed to the air after sputtering and being taken out of the chamber on the bubble density at the bonded interface, is identified and a near-bubble-free Ge/Si bonded interface is achieved for the te of 3 s. The crystallization of a-Ge at Ge/Si bonded interface starts from a-Ge/Ge interface and it fully turns to be single-crystal Ge after post-annealing. The oxide layer at a-Ge/a-Ge bonded interface formed by the interface hydrophilic reaction disappears due to the atom redistribution triggered by the crystallization of a-Ge. As expected, the performance of the Ge/Si heterojunction diode is significantly improved by this oxide-layer-free Ge/Si bonded interface. A low dark current of 1.6 mu A, high on/off current ratio of 3.4 x 10(5), and low ideality factor of 1.02 (150 K) is achieved at -0.5 V for the bonded Ge/Si diode. Finally, the carrier transport mechanisms at Ge/Si bonded interface annealed at different temperatures are also clearly clarified.
机译：我们报告了基于Si和Ge晶片之间的非晶Ge（A-Ge）中间层的无氧化层锗（Ge）/硅（Si）晶片键合的有希望的方法。曝光时间（T（e））的效果，在此，在溅射后A-Ge暴露于空气并在粘结界面处的气泡密度上从腔室中取出，近泡 - 为3秒的TE实现免费GE / SI键合界面。在GE / SI键合界面处的A-GE结晶从A-GE / GE接口开始，并且在退火后，它完全转向单晶GE。由界面亲水反应形成的A-Ge / A-Ge键合界面处的氧化物层由于A-Ge的结晶而引发的原子再分配而消失。如预期的那样，通过该氧化物层的GE / Si键合界面显着改善Ge / Si异质结二极管的性能。在-0.5V对于粘合的GE / Si二极管的-0.5V下，实现低暗电流为1.6μA，高开/关电流比为3.4×10（5）和1.02（150 k）的低理想因子。最后，在不同温度下的Ge / Si键合界面的载流子传输机制也清楚地阐明。

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  • 来源
  • 作者

    Ke Shaoying; Ye Yujie; Wu Jinyong; Lin Shaoming; Huang Wei; Li Cheng; Chen Songyan;

  • 作者单位

    Xiamen Univ Dept Phys Fujian Prov Key Lab Semicond &

    Applicat Collaborat Innovat Ctr Optoelect Semicond &

    Effic Xiamen 361005 Peoples R China;

    Xiamen Univ Dept Phys Fujian Prov Key Lab Semicond &

    Applicat Collaborat Innovat Ctr Optoelect Semicond &

    Effic Xiamen 361005 Peoples R China;

    Xiamen Univ Dept Phys Fujian Prov Key Lab Semicond &

    Applicat Collaborat Innovat Ctr Optoelect Semicond &

    Effic Xiamen 361005 Peoples R China;

    Xiamen Univ Dept Phys Fujian Prov Key Lab Semicond &

    Applicat Collaborat Innovat Ctr Optoelect Semicond &

    Effic Xiamen 361005 Peoples R China;

    Xiamen Univ Dept Phys Fujian Prov Key Lab Semicond &

    Applicat Collaborat Innovat Ctr Optoelect Semicond &

    Effic Xiamen 361005 Peoples R China;

    Xiamen Univ Dept Phys Fujian Prov Key Lab Semicond &

    Applicat Collaborat Innovat Ctr Optoelect Semicond &

    Effic Xiamen 361005 Peoples R China;

    Xiamen Univ Dept Phys Fujian Prov Key Lab Semicond &

    Applicat Collaborat Innovat Ctr Optoelect Semicond &

    Effic Xiamen 361005 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用物理学;
  • 关键词

    Ge/Si wafer bonding; amorphous Ge; near-bubble-free; on/off ratio; oxide-layer-free;

    机译：GE / SI晶圆键合;无定形GE;无近泡;开/关比;无氧层;

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