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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Influence of internal stress and layer thickness on the formation of hydrogen induced thin film blisters in Mo/Si multilayers
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Influence of internal stress and layer thickness on the formation of hydrogen induced thin film blisters in Mo/Si multilayers

机译:内应力和层厚度对MO / Si多层氢诱导薄膜泡泡形成的影响

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摘要

A Mo/Si multilayer film may blister under hydrogen exposure. In this paper, we investigate the impact of intrinsic stress on blister formation in multilayers by varying the Si thickness between 3.4-11 nm and changing the hydrogen ion exposure conditions. Increasing the thickness of a-Si is found to introduce a higher average compressive stress in the multilayer film. Measurements of the average film stress before and after hydrogen exposure did not reveal a correlation between stress relaxation and the observation of surface blisters. Comparing the experimentally observed blister size distribution to that predicted by elastic models of blistering due to pressure, and thin film buckling showed that increasing hydrogen pressure under the blister cap is the main cause of the observed blisters. It is also shown that hydrogen diffusion plays an essential role in the blister formation process as sufficient hydrogen is required to pressurize the blister.
机译:Mo / Si多层膜可以在氢暴露下泡起泡。 在本文中,通过改变3.4-11nm之间的Si厚度并改变氢离子暴露条件,研究了内在应力对多层泡罩形成的影响。 发现A-Si的厚度被发现在多层膜中引入更高的平均压缩应力。 氢暴露之前和之后的平均膜应力的测量并未揭示应力松弛与表面泡罩的观察之间的相关性。 将实验观察到的泡罩尺寸分布与由于压力引起的泡出的弹性模型预测的,并且薄膜屈曲表明,泡罩帽下的氢压力增加是观察到的泡罩的主要原因。 还表明,氢气扩散在泡罩形成过程中起重要作用,因为需要足够的氢气来加压泡罩。

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