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Stripe distributions of graphene-coated Cu foils and their effects on the reduction of graphene wrinkles

机译：石墨烯涂层Cu箔的条纹分布及其对石墨烯皱纹减少的影响

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摘要

Hexagonal single-crystal domains of graphene were analyzed and the wrinkle distribution was obtained using thermal hydrogen etching. We observe parallel stripes on some single-crystal domains and these stripes are associated with graphene wrinkles. The etched trenches in graphene are always perpendicular to the stripes, thereby suggesting the suppressed formation of wrinkles along the stripe direction. Results indicate that the stripes help release the internal stress of graphene to reduce its wrinkle density. Furthermore, these stripes are due to Cu surface reconstruction and relate to two main factors, namely, the distribution of Cu grains and the cooling rate after graphene growth. Continuous graphene films which are synthesized by slow cooling exhibit high stripe area coverage and low sheet resistance because of the low wrinkle density.
机译：分析了石墨烯的六边形单晶域，使用热氢蚀刻获得皱纹分布。 我们观察一些单晶域的平行条纹，这些条纹与石墨烯皱纹相关联。 石墨烯中的蚀刻沟槽始终垂直于条纹，从而暗示沿条纹方向抑制皱折的形成。 结果表明，条纹有助于释放石墨烯的内应力，以降低其皱纹密度。 此外，这些条纹是由于Cu表面重建并涉及两个主要因素，即石墨烯生长后的Cu谷物的分布和冷却速率。 由于低皱纹密度，通过缓慢冷却的连续石墨烯薄膜合成，具有高条带区域覆盖和低薄层电阻。

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  • 来源
    《RSC Advances》 |2015年第117期|共6页
  • 作者

    Zhang Haoran; Zhang Yanhui; Wang Bin; Chen Zhiying; Zhang Yaqian; Sui Yanping; Yu Guanghui; Jin Zhi; Liu Xinyu;

  • 作者单位

    Chinese Acad Sci Shanghai Inst Microsyst &

    Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;

    Chinese Acad Sci Shanghai Inst Microsyst &

    Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;

    Chinese Acad Sci Shanghai Inst Microsyst &

    Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;

    Chinese Acad Sci Shanghai Inst Microsyst &

    Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;

    Chinese Acad Sci Shanghai Inst Microsyst &

    Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;

    Chinese Acad Sci Shanghai Inst Microsyst &

    Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;

    Chinese Acad Sci Shanghai Inst Microsyst &

    Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;

    Chinese Acad Sci Inst Microelect Microwave Devices &

    Integrated Circuits Dept Beijing 100029 Peoples R China;

    Chinese Acad Sci Inst Microelect Microwave Devices &

    Integrated Circuits Dept Beijing 100029 Peoples R China;

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  • 正文语种 eng
  • 中图分类 化学;
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