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Morphology controlled synthesis of Al doped ZnO nanosheets on Al alloy substrate by low-temperature solution growth method

机译:通过低温溶液生长法,形态控制Al掺杂ZnO纳米片的合成

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摘要

We report the morphology-controlled synthesis of aluminium (Al) doped zinc oxide (ZnO) nanosheets on Al alloy (AA-6061) substrate by a low-temperature solution growth method without using any external seed layer and doping process. Doped ZnO nanosheets were obtained at low temperatures of 60-90 degrees C for the growth time of 4 hours. In addition to the synthesis, the effect of growth temperature on the morphological changes of ZnO nanosheets is also reported. As-synthesized nanosheets are characterized by FE-SEM, XRD TEM and XPS for their morphology, crystallinity, microstructure and compositional analysis respectively. The doping of Al in ZnO nanosheets is confirmed with EDXS and XPS. Furthermore, the effect of growth temperature on the morphological changes was studied in the range of 50 to 95 degrees C. It was found that the thickness and height of the nanosheets varied with respect to the growth temperature. The study has given an important insight into the structural morphology with respect to the growth temperature, which in turn enabled us to determine the growth temperature window for the ZnO nanosheets. These Al doped ZnO nanosheets have potential application possibilities in gas sensors, solar cells and energy harvesting devices like nanogenerators.
机译:我们通过低温溶液生长方法报告了在Al合金(AA-6061)底物上的铝(Al)掺杂氧化锌(ZnO)纳米片的形态控制合成,而不使用任何外部种子层和掺杂工艺。在60-90摄氏度的低温下获得掺杂的ZnO纳米片,用于4小时的生长时间。除合成外,还报道了生长温度对ZnO纳米片的形态变化的影响。合成的纳米片的特征在于Fe-SEM,XRD TEM和XPS,分别用于它们的形态,结晶度,微观结构和组成分析。用EDXS和XPS确认Al在ZnO纳米胸中的掺杂。此外,在50至95摄氏度的范围内研究了生长温度对形态变化的影响。发现纳米片的厚度和高度相对于生长温度变化。该研究对增长温度的结构形态进行了重要了解,这反过来使我们能够确定ZnO纳米蛋白酶的生长温度窗口。这些AL掺杂的ZnO纳米蛋白酶具有气体传感器,太阳能电池和能量收集装置的潜在应用可能性,如纳米液。

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  • 来源
    《RSC Advances》 |2015年第18期|共6页
  • 作者单位

    Indian Inst Sci Dept Instrumentat &

    Appl Phys Bangalore 560012 Karnataka India;

    Indian Inst Sci Dept Instrumentat &

    Appl Phys Bangalore 560012 Karnataka India;

    Indian Inst Sci Dept Instrumentat &

    Appl Phys Bangalore 560012 Karnataka India;

    Indian Inst Sci Dept Mat Engn Bangalore 560012 Karnataka India;

    Indian Inst Sci Ctr Nanosci &

    Engn Bangalore 560012 Karnataka India;

    Indian Inst Sci Dept Instrumentat &

    Appl Phys Bangalore 560012 Karnataka India;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

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