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Facile synthesis and optical properties of pure and Ni2+, Co2+, Bi3+, Sb3+ substituted Cu3SnS4

机译:纯和Ni2 +,CO2 +,Bi3 +,Sb3 +取代Cu3Sns4的容易合成和光学性能

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摘要

Cu3SnS4 in an orthorhombic symmetry has been stabilized by a simple and one pot synthesis involving the reaction of thiourea complexes of copper and tin. The obtained product has been characterized thoroughly using high resolution powder X-ray diffraction (PXRD), SEM-EDX, Raman, UV-vis-NIR, and photoluminescence spectroscopy measurements. The presence of bands at 282, 317, 333 and 346 cm(-1) in the Raman spectrum conclusively confirmed the orthorhombic symmetry of Cu3SnS4. Adopting this synthetic strategy, quaternary compositions consisting of nickel, cobalt, antimony and bismuth have been synthesized and characterized by all physico-chemical techniques. Of all these, compositions containing bismuth and antimony in place of tin are quite original and are reported for the first time. While the nickel substitution retained the orthorhombic symmetry, cobalt substitution resulted in tetragonal symmetry for the quaternary composition. Similarly, the presence of bismuth ions in the lattice preserved the orthorhombic symmetry and the PXRD pattern of the product containing Sb3+-ions could be indexed to tetragonal symmetry. The homogeneous distribution of all these elements in the samples was verified from a scanning TEM technique. The band gaps of the pure and Ni2+, Co2+, Bi3+ and Sb3+ substituted Cu3SnS4 compositions, determined from the UV-vis-NIR absorbance data, were in the range of 0.9-1.46 eV. This is ideally suited for the use of these materials in photovoltaic cells.
机译:通过一种简单而一个罐的合成稳定在正交对称中的Cu3Sns4,涉及铜和锡的硫脲络合物的反应。已经使用高分辨率粉末X射线衍射(PXRD),SEM-EDX,拉曼,UV-Vis-Nir和光致发光光谱测量来彻底地表征了所得产物。在拉曼光谱中存在282,317,333和346cm(-1)的条带的存在确认了Cu3SNS4的正交对称性。采用这种合成策略,由镍,钴,锑和铋组成的季甲基组合物已经合成,并通过所有物理化学技术进行了特征。在所有这些中,含有铋和锑代替锡的组合物是非常原创的,并且首次报道。虽然镍取代保留了正交对称性,但钴取代导致四元体组合物的四方对称性。类似地,晶格中的铋离子的存在保留了含有Sb3 + - + - 含有Sb3 + - + - 甲基乙基的正交对称性的离子对称性和PXRD图案可分析到四边形对称性。从扫描TEM技术验证样品中所有这些元素的均匀分布。从UV-Vis-Nir吸光度数据中确定的纯和Ni2 +,CO 2 +,Bi3 +和Sb3 +取代的Cu3Sns4组合物的带间隙在0.9-1.46eV的范围内。这非常适合在光伏电池中使用这些材料。

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  • 来源
    《RSC Advances》 |2015年第54期|共7页
  • 作者单位

    Univ Delhi Dept Chem Mat Chem Grp Delhi 110007 India;

    Univ Delhi Dept Chem Mat Chem Grp Delhi 110007 India;

    Univ Delhi Dept Chem Mat Chem Grp Delhi 110007 India;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
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