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首页> 外文期刊>RSC Advances >Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
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Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition

机译：通过等离子体增强原子层沉积在C平面蓝宝石上生长的甘蓝结构与界面现象

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摘要

Gallium nitride films were deposited via plasma-enhanced atomic layer deposition (PEALD) using triethylgallium and forming gas as precursors. An optimized process was developed and the effect of growth temperature on the structure and optical properties of the films investigated. In-depth X-ray diffraction analyses show that there is a critical temperature, below which the films are amorphous. Raising the growth temperature above the critical temperature increases the grain size of the polycrystalline film, while degrading the degree of preferred orientation. Azimuthal XRD scans show clear signs of a crystallographic relationship between the (002) planes of the sapphire substrate and GaN. Growth rate shows a steady rise until a rapid jump at 425 degrees C occurs. The study of the surface profile by AFM shows that the hillocks on the surface start to grow in diameter as well as height, increasing the total growth front area. This also decreases the surface roughness. XRR studies reveal that mass density reaches its maximum value at 240 degrees C, and is stable after that. Carrier mobility is increased by two orders of magnitude, when the growth temperature is raised from 150 degrees C to 425 degrees C. As expected, a similar but reverse trend was observed for the electrical resistivity. Refractive index follows the trends of mass density and crystal quality with a clear increase at the onset of crystallinity. Overall, the surface profile and the engineering properties improve as growth temperature is increased. At the high end of the growth temperature range, PEALD GaN films grown on (002) sapphire were p-type with a hole mobility of 575 cm(2) V-1 s(-1).
机译：氮化镓薄膜经由使用三乙基和形成气体的前体的等离子体增强原子层沉积（PEALD）沉积。一个优化过程的开发和生长温度的结构和膜的光学特性的影响调查。深入的X射线衍射分析表明，存在一个临界温度，低于该膜是无定形的。提高生长温度高于临界温度增加了多晶膜的晶粒尺寸，而降低优选的取向度。方位角XRD扫描显示的蓝宝石衬底和GaN的（002）面之间的晶关系明显迹象。增长速度显示了稳步上升，直到在425摄氏度时迅速蹿。通过原子力显微镜显示的表面轮廓的研究，在表面上的小丘开始直径增加以及高度，增加总的生长前沿领域。这也减小了表面粗糙度。 XRR研究表明，质量密度达到在240℃其最大值，之后是稳定的。载流子迁移增加了两个数量级，当生长温度从150摄氏度升高到425℃。如所预期的，观察到的电阻率类似但相反的趋势。折射率如下质量密度和晶体质量的趋势与在结晶的开始明显增加。总体而言，表面轮廓和工程特性，提高生长温度升高。在生长温度范围的高端，生长在PEALD GaN薄膜（002）是蓝宝石p型用575厘米（2）V-1秒的空穴迁移率（-1）。

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  • 来源
    《RSC Advances》 |2015年第71期|共10页
  • 作者

    Motamedi P.; Cadien K.;

  • 作者单位

    Univ Alberta Dept Chem &

    Mat Engn Edmonton AB T6G 2V4 Canada;

    Univ Alberta Dept Chem &

    Mat Engn Edmonton AB T6G 2V4 Canada;

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  • 正文语种 eng
  • 中图分类 化学;
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