Indium incorporation in in_xGa_(1-x)N/GaN nanowire heterostructures investigated by line-of-sight quadrupole mass spectrometry

W?lz M.; Fernández-Garrido S.; Hauswald C.; Brandt O.; Limbach F.; Geelhaar L.; Riechert H.

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Indium incorporation in in_xGa_(1-x)N/GaN nanowire heterostructures investigated by line-of-sight quadrupole mass spectrometry

机译：视线四极杆质谱法研究in_xGa_（1-x）N / GaN纳米线异质结构中的铟掺入

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We investigate the formation of the ternary alloy In_xGa_(1-x)N in the growth of self-induced nanowires by plasma-assisted molecular beam epitaxy. A series of samples grown at different temperatures were analyzed in situ by line-of-sight quadrupole mass spectrometry, and the predicted composition was verified by X-ray diffraction on as-grown nanowire ensembles. The In_xGa_(1-x)N composition is determined by the thermally activated loss of In due to InN decomposition and In desorption, similar to the composition of planar layers. The convolution of decomposition, reincorporation, and desorption is described by an apparent activation energy of about 2.5 eV. We show the feasibility of in situ control of the In_xGa_(1-x)N nanowire composition by line-of-sight quadrupole mass spectrometry.

机译：我们调查了三元合金In_xGa_（1-x）N在等离子体辅助分子束外延自生纳米线的生长中的形成。通过视线四极杆质谱仪在原位分析了在不同温度下生长的一系列样品，并通过在生长的纳米线组件上进行X射线衍射验证了预测的组成。类似于平面层的组成，In_xGa_（1-x）N的组成取决于因InN分解和In解吸而引起的In的热活化损失。分解，再结合和解吸的卷积由约2.5 eV的表观活化能描述。我们展示了通过视距四极杆质谱法原位控制In_xGa_（1-x）N纳米线成分的可行性。

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《Crystal growth & design》 |2012年第11期|共7页
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W?lz M.; Fernández-Garrido S.; Hauswald C.; Brandt O.; Limbach F.; Geelhaar L.; Riechert H.;
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中图分类晶体学;
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1. Indium incorporation in in_xGa_(1-x)N/GaN nanowire heterostructures investigated by line-of-sight quadrupole mass spectrometry [J] . W?lz M., Fernández-Garrido S., Hauswald C., Crystal growth & design . 2012,第11期

机译：视线四极杆质谱法研究in_xGa_（1-x）N / GaN纳米线异质结构中的铟掺入
2. Minimizing the impact of surface potentials in axial In_xGa_(1-x)N/GaN nanowire heterostructures by reducing their diameter [J] . O Marquardt, L Geelhaar, O Brandt Journal of Physics, D. Applied Physics: A Europhysics Journal . 2014,第39期

机译：通过减小直径来减小轴向In_xGa_（1-x）N / GaN纳米线异质结构中表面电势的影响
3. Luminous efficiency of Axial In_xGa_(1-x)N/GaN nanowire heterostructures: Interplay of polarization and surface potentials [J] . Marquardt O., Hauswald C., W?lz M., Nano letters . 2013,第7期

机译：轴向In_xGa_（1-x）N / GaN纳米线异质结构的发光效率：极化和表面电势的相互作用
4. Influence of surface and polarization potentials on the electronic and optical properties of In_xGa_(1-x)N/GaN axial nanowire heterostructures [C] . Oliver Marquardt, Christian Hauswald, Martin Wolz, International Conrference on Numerical Simulation of Optoelectronic Devices . 2013

机译：表面和偏振电位对in_xga_（1-x）n / gaN轴向纳米线异质结构的电子和光学性质的影响
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Indium incorporation in in_xGa_(1-x)N/GaN nanowire heterostructures investigated by line-of-sight quadrupole mass spectrometry

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