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首页> 外文期刊>Crystal growth & design >Spontaneous Conversion of Basal Plane Dislocations in 4° Off-Axis 4H?SiC Epitaxial Layers
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Spontaneous Conversion of Basal Plane Dislocations in 4° Off-Axis 4H?SiC Epitaxial Layers

机译：4°离轴4H？SiC外延层中基面位错的自发转化

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The conversion of basal plane dislocations (BPDs) to electrically benign threading edge dislocations in 4° off-axis 4H?SiC epilayers has been investigated using ultraviolet photoluminescence imaging. The conversion spontaneously occurred throughout the epitaxial layer for all substrates studied using similar epitaxial growth conditions. BPD conversion in highly doped epilayers was suppressed compared with lower n-type doped layers, suggesting that nitrogen concentration influences the conversion mechanism. However, it is technologically important for the conversion to occur in a heavily doped buffer layer. The densities of BPDs in low-doped (～10~(14) cm~(?3)) films having a thickness of 20 μm were significantly reduced when a ～20 μm thick highly doped N~+ buffer layer was grown between the low-doped layer and the substrate. Without the buffer layer, an average of ～50 BPDs cm~(?2) was observed and with the buffer layer, an average of 1.5 BPDs cm~(?2) was detected; the best result was 0.2 BPD cm~(?2). A PiN structure consisting of a 25 μm thick N+ buffer layer to convert the majority of BPDs prior to the device structure was used to test the mitigation process, and the diodes demonstrated no forward voltage change after 225 h of continuous biasing at 100 A cm?2.
机译：使用紫外光致发光成像技术研究了在4°离轴4H2SiC外延层中基底平面位错（BPD）转变为电良性穿线边缘位错。对于使用相似的外延生长条件研究的所有衬底，转化自发地发生在整个外延层中。与较低的n型掺杂层相比，高掺杂外延层中的BPD转化受到抑制，这表明氮浓度会影响转化机理。但是，在重掺杂的缓冲层中进行转换在技术上很重要。当在低浓度（〜10〜（14）cm〜（？3））之间形成约20μm的高掺杂N〜+缓冲层时，BPD的密度显着降低。掺杂层和衬底。在没有缓冲层的情况下，平均观察到约50 BPDs cm〜（？2）;在没有缓冲层的情况下，检测到平均值为1.5 BPDs cm〜（？2）。最好的结果是0.2 BPD cm〜（？2）。在器件结构之前，使用由25μm厚的N +缓冲层构成的PiN结构来转换大多数BPD，以测试缓解过程，并且二极管在100 A cm？2的连续偏压下225 h后没有表现出正向电压变化。 2。

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