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Growing Single Crystals with a Low Melt Height and an Axial Vibration

机译：生长低熔体高度和轴向振动的单晶

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摘要

Single crystal growth of antimony-doped germanium is investigated by the vertical Bridgman (VB), axial heat processing (AHP), and axial vibrational control (AVC) methods. In the VB method, the existence of a radial temperature gradient in the melt leads to an inhomogeneous solute distribution which affects the quality of the grown crystal. However, in the AHP growth, the melt height above the interface and the radial temperature gradient in the melt can be reduced by immersing a baffle with a high thermal conductivity. Consequently, the radial solute segregation can be reduced. In order to provide even a better solute homogeneity, the immersed baffle can be vibrated axially which forms the AVC growth. Seven Sb-doped Ge crystals are grown with the three mentioned methods in order to investigate the effect of the melt height, the pulling velocity, and amplitude and frequency of the vibration on the homogeneity of the solute distribution, the achieved single crystal length, the morphological stability, and the quality of the grown crystals. It is observed that a reduced melt height and appropriately adjusted vibration in the melt can improve the crystal quality. The interface stability has been analyzed by several criteria.
机译：通过垂直布里奇曼（VB），轴向热处理（AHP）和轴向振动控制（AVC）方法研究了掺锑锗的单晶生长。在VB方法中，熔体中存在径向温度梯度会导致溶质分布不均匀，从而影响生长晶体的质量。但是，在AHP生长中，可以通过浸入具有高导热性的挡板来降低界面上方的熔体高度和熔体中的径向温度梯度。因此，可以减少径向溶质偏析。为了提供更好的溶质均匀性，可将浸入式挡板轴向振动，从而形成AVC生长。为了研究熔体高度，提拉速度以及振动的振幅和频率对溶质分布的均匀性，所获得的单晶长度，晶格的影响，用上述三种方法生长了七个掺Sb的Ge晶体。形态的稳定性，以及所生长晶体的质量。观察到降低的熔体高度和适当调节熔体中的振动可以改善晶体质量。接口稳定性已通过几种标准进行了分析。

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