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首页> 外文期刊>Crystallography reports >Structural Characteristics of Epitaxial Low-Temperature Grown {InGaAs/InAlAs} Superlattices on InP(100) and InP(111)A Substrates
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Structural Characteristics of Epitaxial Low-Temperature Grown {InGaAs/InAlAs} Superlattices on InP(100) and InP(111)A Substrates

机译：外延低温种植的结构特征{InGaAs / Inalas} INP（100）和INP（111）的基板上的超晶格

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摘要

The structural characteristics of {InGaAs/InAlAs} superlattices, grown by molecular-beam epitaxy (MBE) at a temperature of 200 degrees C on InP substrates with the crystallographic orientations (100) and (111)A, have been investigated. The superlattices consist of 100 periods of alternating In0.53Ga0.47As and In0.52Al0.48As layers with nominal thicknesses of 12 and 8 nm, respectively. The structural quality of the samples has been investigated by transmission electron microscopy (TEM). It is shown that the superlattice on the InP(100) substrate is single-crystal with high concentration of stacking faults, twins, and small-angle domains. The superlattice on the InP(111)A substrate is polycrystalline; however, the grown layers can be traced throughout almost the entire superlattice. A wave-like curvature of the layers grown on the InP(111)A substrate is much larger than that of the layers grown on the InP(100) substrate: the angular ranges of layer deviation from the horizontal growth plane reach +/- 30 degrees and +/- 18 degrees, respectively.
机译：已经研究了{InGaAs / Inalas}超晶格的结构特征，通过分子束外延（MBE）在200℃的INP底物上的温度下，具有晶体取向（100）和（111）A的温度。超晶格分别包括100个交替的IN0.53Ga0.47as和IN0.52AL0.48AS层的100个周期，分别具有12和8nm的标称厚度。通过透射电子显微镜（TEM）研究了样品的结构质量。结果表明，INP（100）衬底上的超晶格是具有高浓度堆叠故障，双胞胎和小角色域的单晶。 INP（111）上的超晶格是多晶;然而，生长的层可以在整个超晶格中追踪。在InP（111）上生长的层的波状曲率远大于在INP（100）基板上生长的层的层：从水平生长面达到+/- 30的层偏差的角度范围度和+/- 18度分别。

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  • 来源
    《Crystallography reports》 |2020年第3期|共6页
  • 作者

    Galiev G. B.; Vasiliev A. L.; Vasilevskii I. S.; Vinichenko A. N.; Klimov E. A.; Klochkov A. N.; Trunkin I. N.; Pushkarev S. S.;

  • 作者单位

    Russian Acad Sci Mokerov Inst Ultra High Frequency Semicond Elect Moscow 117105 Russia;

    Kurchatov Inst Natl Res Ctr Moscow 123182 Russia;

    Natl Res Nucl Univ MEPhI Moscow Engn Phys Inst Moscow 115409 Russia;

    Natl Res Nucl Univ MEPhI Moscow Engn Phys Inst Moscow 115409 Russia;

    Russian Acad Sci Mokerov Inst Ultra High Frequency Semicond Elect Moscow 117105 Russia;

    Russian Acad Sci Mokerov Inst Ultra High Frequency Semicond Elect Moscow 117105 Russia;

    Kurchatov Inst Natl Res Ctr Moscow 123182 Russia;

    Russian Acad Sci Mokerov Inst Ultra High Frequency Semicond Elect Moscow 117105 Russia;

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  • 正文语种 eng
  • 中图分类 晶体学;
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