Boron carbide and silicon oxide hetero-nanonecklaces via temperature modulation

Tian JF; Wang XJ; Bao LH; Hui C; Liu F; Yang TZ; Shen CM; Gao HJ

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Boron carbide and silicon oxide hetero-nanonecklaces via temperature modulation

机译：通过温度调节碳化硼和氧化硅杂纳米项链

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Boron carbide and silicon oxide (BCSiO) hetero-nanonecklaces have been successfully synthesized via temperature modulation. This kind of nanostructure was formed by coating 100-500 nm silicon oxide nanoballs onto 20-30 nm boron carbide nanowires. Synthetic analysis shows that a two-step model at different temperatures and the poor wettability between boron carbide and silicon oxide play important roles in the growth of hetero-nanonecklaces. Photoluminescence of the synthesized BCSiO hetero-nanonecklaces shows enhanced visible light emissions at 637.6 nm, which is attributed to the small size of the boron carbide nanowires and defects induced by silicon oxide sheaths.

机译：碳化硼和氧化硅（BCSiO）杂纳米项链已通过温度调节成功合成。通过将100-500 nm的氧化硅纳米球涂覆到20-30 nm的碳化硼纳米线上来形成这种纳米结构。综合分析表明，在不同温度下的两步模型以及碳化硼和氧化硅之间差的润湿性在杂化纳米项链的生长中起重要作用。合成的BCSiO杂纳米项链的光致发光在637.6 nm处显示出增强的可见光发射，这归因于碳化硼纳米线的尺寸较小以及氧化硅护套引起的缺陷。

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来源
《Crystal growth & design》 |2008年第9期|共5页
作者
Tian JF; Wang XJ; Bao LH; Hui C; Liu F; Yang TZ; Shen CM; Gao HJ;
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正文语种 eng
中图分类晶体学;
关键词
NANOWIRE BUILDING-BLOCKS; CDSE QUANTUM DOTS; CARBON NANOTUBES; GROWTH; PHOTOLUMINESCENCE; FABRICATION; NANORODS; HETEROSTRUCTURES; NANOSTRUCTURES; ARRAYS;

机译：纳米建筑砌块;CDSE量子点;碳纳米管;生长;光致发光;制造;纳米;异质结构;纳米结构;阵列;

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1. Boron carbide and silicon oxide hetero-nanonecklaces via temperature modulation [J] . Tian JF, Wang XJ, Bao LH, Crystal growth & design . 2008,第9期

机译：通过温度调节碳化硼和氧化硅杂纳米项链
2. In Situ Reaction Synthesis of Silicon Carbide-Boron Nitride Composite from Silicon Nitride-Boron Oxide-Carbon [J] . Guo-Jun Zhang, Yoshihisa Beppu, Motohide Ando, Journal of Food Science . 2002,第11期

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3. High Temperature Ionic Liquids Electrosynthesis of Mo2C Protective Coatings on Diamond, Boron Nitride, Silicon and Boron Carbide [J] . VICTOR MALYSHEV, ANGELINA GAB, DIMITRI SHAKHNIN Revista de Chimie . 2018,第3期

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5. Investigation of Low Temperature, Atomic-Layer-Deposited Oxides on 4Hydrigen-Silicon Carbide and their Effect on the Silicon Carbide/Silicon Dioxide Interface. [D] . Haney, Sarah Kay. 2012

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6. Environment-Friendly Preparation of Reaction-Bonded Silicon Carbide by Addition of Boron in the Silicon Melt [O] . Maoqiang Rui, Yaxiang Zhang, Jing Ye 2021

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8. FABRICATION DEVELOPMENT OF BORON CARBIDE AND BORON CARBIDE + SILICON CARBIDE MIXTURES FOR POSSIBLE APPLICATION AS LUMPED BURNABLE POISONS IN PWR-2 [R] . S. F. Kaufman 1964

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Boron carbide and silicon oxide hetero-nanonecklaces via temperature modulation

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