Formation of Spatially Addressed Ga(As)Sb Quantum Rings on GaAs(001) Substrates by Droplet Epitaxy

Alonso-Gonzalez P; Gonzalez L; Fuster D; Gonzalez Y; Taboada AG; Ripalda J

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Formation of Spatially Addressed Ga(As)Sb Quantum Rings on GaAs(001) Substrates by Droplet Epitaxy

机译：通过液滴外延在GaAs（001）衬底上形成空间寻址的Ga（As）Sb量子环

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In this work we report on the ability to form low density Ga(As)Sb quantum ring-shaped nanostructures (Q-rings) on GaAs(001) substrates by the droplet epitaxy technique. The Q-rings are formed by crystallization of Ga droplets under antimony flux. After being capped by a GaAs layer, these nanostructures show surface mounding features that are correlated with the buried nanostructures, as demonstrated by TEM analysis, permitting an easy surface location of the optically active Q-rings.

机译：在这项工作中，我们报告了通过液滴外延技术在GaAs（001）衬底上形成低密度Ga（As）Sb量子环形纳米结构（Q环）的能力。 Q环是通过锑流下Ga液滴的结晶而形成的。在被GaAs层覆盖后，这些纳米结构显示出与埋入的纳米结构相关的表面隆起特征，如TEM分析所证实的那样，允许光学活性Q环易于表面定位。

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《Crystal growth & design》 |2009年第2期|共3页
作者
Alonso-Gonzalez P; Gonzalez L; Fuster D; Gonzalez Y; Taboada AG; Ripalda J;
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正文语种 eng
中图分类晶体学;
关键词
MOLECULAR-BEAM EPITAXY; NANOSTRUCTURES; SINGLE; DOTS; GROWTH; MODES;

机译：分子束外延;纳米结构;单点;点;生长;模式;

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1. Formation of Spatially Addressed Ga(As)Sb Quantum Rings on GaAs(001) Substrates by Droplet Epitaxy [J] . Alonso-Gonzalez P, Gonzalez L, Fuster D, Crystal growth & design . 2009,第2期

机译：通过液滴外延在GaAs（001）衬底上形成空间寻址的Ga（As）Sb量子环
2. Periodic Two-Dimensional GaAs and InGaAs Quantum Rings Grown on GaAs (001) by Droplet Epitaxy [J] . Tung Kar Hoo Patrick, Huang Jian, Danner Aaron Journal of nanoscience and nanotechnology . 2016,第6期

机译：液滴外延在GaAs（001）上生长的周期性二维GaAs和InGaAs量子环
3. Unstrained GaAs Quantum Dashes Grown on GaAs(001) Substrates by Droplet Epitaxy [J] . Masafumi Jo, Takaaki Mano, Kazuaki Sakoda Applied physics express . 2010,第4期

机译：通过液滴外延生长在GaAs（001）衬底上的无应变GaAs量子划线
4. Structural Defects in InSb Quantum Wells Grown on GaAs (001) Substrates via Al_(0.09)In_(0.91)Sb/GaSb-AlSb Strained Layer Superlattice/AlSb/GaSb Buffer Layers [C] . Symposium on Progress in Semiconductor Materials - Novel Materials and Electronic and Optoelectronic Applications . 2006

机译：通过AL_（0.09）在GaAs（001）底物上生长的INSB量子孔中的结构缺陷（0.09）IN_（0.91）SB / GASB-ALSB应变层超晶格/ ALSB / GASB缓冲层
5. Bandgap Tuning of GaAs/GaAsSb(N) Core-Shell Nanowires Grown by Molecular Beam Epitaxy [D] . Kasanaboina, Pavan Kumar. 2016

机译：通过分子束外延生长的GaAs / Gaassb（N）核心壳纳米线的带隙调谐
6. Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature [O] . Mohamed Benyoucef, Verena Zuerbig, Johann Peter Reithmaier, 2012

机译：高衬底温度下通过液滴外延生长的单个InGaAs / GaAs量子点的单光子发射
7. Formation of Spatially Addressed Ga(As)Sb Quantum Rings on GaAs(001) Substrates by Droplet Epitaxy [O] . Alonso-González, Pablo, González Sotos, Luisa, Fuster, David, 2009

机译：通过液滴外延在GaAs（001）衬底上形成空间寻址的Ga（As）Sb量子环
8. Evolution of GaSb epitaxy on GaAs(001)-c(4 x 4); Journal article [R] . Thibado, P. M., Bennett, B. R., Twigg, M. E., 1996

机译：Gaas（001）-c（4×4）上Gasb外延的演变;杂志文章

Formation of Spatially Addressed Ga(As)Sb Quantum Rings on GaAs(001) Substrates by Droplet Epitaxy

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