Strain Relaxation in Multilayer III-N Structures on Si(111) Substrates

E. V. Verkhovtceva; A. E. Nikolaev; A. V. Sakharov; M. A. Yagovkina

首页> 外文期刊>Crystallography reports >Strain Relaxation in Multilayer III-N Structures on Si(111) Substrates

【24h】

Strain Relaxation in Multilayer III-N Structures on Si(111) Substrates

机译：Si（111）衬底上多层III-N结构中的应变弛豫

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

X-ray diffractometry and X-ray scattering reciprocal space maps have been used to study strain relaxation in a complex buffer composed of seven intermediate layers of AlxGa1 - xN composition with differ-ent values of x, decreasing with an increase in the distance from the substrate. The layers have been grown by hydride metalorganic vapor phase epitaxy on silicon and sapphire substrates. Differences in the structural quality of the first four layers of a multilayer buffer grown on different substrates have been revealed. A gradual smoothing out of these differences in the next three layers with an increase in the layer serial number has been shown. The last grown intermediate Al_xGa_(1 - x)N layer and the GaN layer grown on it have identical thick-nesses and degrees of mosaicity, regardless of the substrate type. Device structures grown on a complex buffer demonstrate emission in approximately the same wavelength range.

机译：X射线衍射和X射线散射的倒数空间图已用于研究复杂缓冲液中的应变松弛，该缓冲液由x的x值不同的7个AlxGa1-xN中间层组成，并随着与x的距离增加而减小基质。通过在硅和蓝宝石衬底上的氢化物金属有机气相外延生长这些层。已经揭示了在不同基板上生长的多层缓冲液的前四层的结构质量的差异。已经显示出随着层序号的增加逐渐消除了接下来三层中的这些差异。最后生长的中间Al_xGa_（1-x）N层和在其上生长的GaN层具有相同的厚度和镶嵌度，而与衬底类型无关。在复杂缓冲液上生长的器件结构显示出在大约相同波长范围内的发射。

著录项

来源
《Crystallography reports》 |2013年第7期|共6页
作者
E. V. Verkhovtceva; A. E. Nikolaev; A. V. Sakharov; M. A. Yagovkina;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
Strain; Relaxation; Multilayer;

机译：应变;松弛;多层;

相似文献

外文文献
中文文献
专利

1. Strain Relaxation in Multilayer III-N Structures on Si(111) Substrates [J] . E. V. Verkhovtceva, A. E. Nikolaev, A. V. Sakharov, Crystallography reports . 2013,第7期

机译：Si（111）衬底上多层III-N结构中的应变弛豫
2. Interface structures and strain relaxation mechanisms of ferroelectric BaTiO_3/SrTiO_3 multilayers on (001) MgO substrates [J] . Ying Ding, Jianghua Chen, Junming He, Journal of Crystal Growth . 2013,第nova15期

机译：（001）MgO基体上铁电BaTiO_3 / SrTiO_3多层膜的界面结构和应变松弛机制
3. Lattice pulling effect and strain relaxation in axial (In,Ga)N/GaN nanowire heterostructures grown on GaN-buffered Si(111) substrate [J] . X. Kong, S. Albert, A. Bengoechea-Encabo, Physica status solidi . 2015,第4期

机译：在GaN缓冲的Si（111）衬底上生长的轴向（In，Ga）N / GaN纳米线异质结构中的晶格拉动效应和应变松弛
4. Evaluation of strain relaxation in GaAsP/GaAs multilayer structure grown on misoriented GaAs substrate [C] . Jerzy Sass, Institute of Electronic Materials Technology, Warsaw, Liquid and Solid State Crystals: Physics, Technology and Applications . 1993

机译：在取向不正确的GaAs衬底上生长的GaAsP / GaAs多层结构中的应变松弛评估
5. Effects of strain relaxation in silicon germanium growth on uniquely oriented silicon substrates. [D] . Ware, Morgan Ellison. 2002

机译：硅锗生长在独特取向的硅基板上的应变松弛效应。
6. The Microstructural Characterization of Multiferroic LaFeO3-YMnO3 Multilayers Grown on (001)- and (111)-SrTiO3 Substrates by Transmission Electron Microscopy [O] . Bin Pang, Lei Sun, Xuan Shen, 2017

机译：（001）-和（111）-SrTiO3衬底上生长的多铁性LaFeO3-YMnO3多层膜的显微结构表征
7. Lattice pulling effect and strain relaxation in axial (In, Ga)N/GaN nanowire heterostructures grown on GaN-buffered Si(111) substrate [O] . Kong Xiang, Albert Steven, Bengoechea Encabo Ana, 2015

机译：在GaN缓冲的Si（111）衬底上生长的轴向（In，Ga）N / GaN纳米线异质结构中的晶格拉动效应和应变松弛

Strain Relaxation in Multilayer III-N Structures on Si(111) Substrates

摘要

著录项

相似文献

相关主题

期刊订阅