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Characterization of SOI technology based MEMS differential capacitive accelerometer and its estimation of resolution by near vertical tilt angle measurements

机译:基于SOI技术的MEMS差动电容仪及近垂直倾斜角度测量来表征及其分辨率估计

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This paper discusses the evaluation and testing of MEMS capacitive accelerometer (z-axis sensitive) fabricated using silicon-on-insulator (SOI) wafer. The accelerometer structure consists of highly conductive (p-type, resistivity: 0.001 omega-cm) silicon proof mass (1000 mu m x 1000 mu m x 30 mu m) suspended by four crab-like L-shaped beams (1150 mu m x 30 mu m x 30 mu m) over Pyrex (7740) glass cavity (5 mu m depth). Rest capacitance of the accelerometer structure is found to be ~ 2.1-2.25 pF range. Qualified accelerometer chips are packaged and sealed in lead less ceramic (LCC) package along with capacitive readout circuitry chip. Packaged accelerometer showed a scale factor sensitivity of ~ 47 mV/g in - 17-42 g acceleration range with 3% non-linearity. Corresponding cross-axis sensitivity also measured (2%) in full-scale range. Frequency response of the accelerometer showed a 3 dB bandwidth of 380 Hz. Resolution of the accelerometer is measured by an innovative technique involving inclinometer. Here, the device output is recorded at near vertical mounting tilt angle (theta ~ 90 degrees) of inclinometer. Present accelerometer output can be resolved at the inclinometer measurement at 90 degrees (output: 2.42662 V) and 89 degrees (output: 2.42780 V) which corresponds to an acceleration resolution of ~ 17 mg.
机译:本文讨论了使用绝缘体(SOI)晶片制造的MEMS电容式电容计(Z轴敏感)的评估和测试。加速度计结构由高导电(P型,电阻率:0.001ω-CM)硅防尘质量(1000μm×1000μm×30μm)悬挂在四个螃蟹状L形梁(1150μmx30μmx 30 mu m)通过Pyrex(7740)玻璃腔(5 mu m深度)。发现加速度计结构的静电电容为〜2.1-2.25 PF范围。合格的加速度计芯片包装并用铅较少的陶瓷(LCC)封装以及电容读出电路芯片密封。封装的加速度计显示比例因子敏感性〜47 mV / g In - 17-42g加速度范围,具有3%的非线性。相应的横轴灵敏度也在满量程范围内测量(2%)。加速度计的频率响应显示3 dB带宽为380 Hz。通过涉及倾斜度计的创新技术来测量加速度计的分辨率。这里,设备输出记录在倾斜仪的近垂直安装倾斜角度(θ〜90度)。目前的加速度计输出可以在90度(输出:2.42662 V)和89度(输出:2.42780 V)上进行倾斜度计测量,这对应于〜17 mg的加速度分辨率。

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