X-ray diagnostics of P-HEMT AlGaAs/InGaAs/GaAs structures

Subbotin IA; Chuev MA; Pashaev EM; Imamov RM; Galiev GB; Tikhomirov SA; Kacerovsky P

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X-ray diagnostics of P-HEMT AlGaAs/InGaAs/GaAs structures

机译：P-HEMT AlGaAs / InGaAs / GaAs结构的X射线诊断

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The structural characteristics of the P-HEMT AlGaAs/InGaAs/GaAs heterostructure have been studied bv high-resolution X-ray diffractometry. The parameters of the heterostructure layers were determined by simultaneous analysis of the X-ray reflection curves for the (004) and ( 113) crystallographic planes. Inter- face diffusion has been established for the InyGa1-y. As quantum well and the Al-x,Ga1-x As spacer layer, which arc characterized by reconstructed profiles of the lattice parameter distribution and anisotropic distribution of random displacements in the layer plane and in the perpendicular direction.

机译：通过高分辨率X射线衍射法研究了P-HEMT AlGaAs / InGaAs / GaAs异质结构的结构特征。通过同时分析（004）和（113）晶面的X射线反射曲线来确定异质结构层的参数。已经为InyGa1-y建立了界面扩散。作为量子阱和Al-x，Ga1-x作为隔离层，其特征在于层平面和垂直方向上的随机位移的晶格参数分布和各向异性分布的重构轮廓。

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来源
《Crystallography reports》 |2007年第4期|共7页
作者
Subbotin IA; Chuev MA; Pashaev EM; Imamov RM; Galiev GB; Tikhomirov SA; Kacerovsky P;
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正文语种 eng
中图分类晶体学;
关键词
PSEUDOMORPHIC HEMTS; QUANTUM-WELL; DIFFRACTOMETRY; DIFFRACTION; LAYERS;

机译：伪斜率;量子阱;比色法;衍射;层;

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专利

1. X-ray diagnostics of P-HEMT AlGaAs/InGaAs/GaAs structures [J] . Subbotin IA, Chuev MA, Pashaev EM, Crystallography reports . 2007,第4期

机译：P-HEMT AlGaAs / InGaAs / GaAs结构的X射线诊断
2. Synchrotron X-ray topographic analysis of the impact of processing steps on the fabrication of AlGaAs/InGaAs p-HEMT's [J] . McNally P.J., Tuomi T. IEEE Transactions on Electron Devices . 1996,第7期

机译：同步加速器X射线形貌分析工艺步骤对AlGaAs / InGaAs p-HEMT的制造的影响
3. Effect of the built-in electric field on optical and electrical properties of AlGaAs/InGaAs/GaAs P-HEMT nanoheterostructures [J] . Khabibullin R.A., Vasilevskii I.S., Galiev G.B., Semiconductors . 2011,第5期

机译：内置电场对AlGaAs / InGaAs / GaAs P-HEMT纳米异质结构的光电性能的影响
4. High resolution X-ray diffraction analysis of p-type strained InGaAs/AlGaAs multiple quantum well structures [C] . W. Shi, D. H. Zhang, T. Osotchan, MRS Meeting . 2000

机译：高分辨率X射线衍射分析P型应变IngaAs / Algaas多量子阱结构
5. Breakdown behavior and optimization of AlGaAs/InGaAs pseudomorphic high electron mobility transistors. [D] . Palma, John Francis. 2011

机译：AlGaAs / InGaAs伪晶高电子迁移率晶体管的击穿行为和优化。
6. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot [O] . Tarek A Ameen, Hesameddin Ilatikhameneh, Archana Tankasala, 2018

机译：掺杂的自组装InAs / InGaAs / GaAs / AlGaAs量子点中应变相关的光吸收的理论研究
7. Synchrotron X-ray topographic analysis of the impact of processing steps on the fabrication of AlGaAs/InGaAs p-HEMT's [O] . McNally, P. J., Tuomi, T., Herbert, P. A. F., 1996

机译：同步加速器X射线形貌分析工艺步骤对AlGaAs / InGaAs p-HEMT的制造的影响
8. Electronic Properties of Pseudomorphic InGaAs/AlGaAs (ON GaAs) and InGaAs/InAlAs (On InP) MODFET Structures [R] . Jaffe, M., Sekiguchi, Y., East, J., 1988

机译：假晶InGaas / alGaas（ON Gaas）和InGaas / Inalas（Inp）mODFET结构的电子特性

X-ray diagnostics of P-HEMT AlGaAs/InGaAs/GaAs structures

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