...
首页> 外文期刊>Crystallography reports >Effect of doping method on the formation of charge-compensating defects in PbMoO_4:Nd~(3+) crystals
【24h】

Effect of doping method on the formation of charge-compensating defects in PbMoO_4:Nd~(3+) crystals

机译:掺杂方法对PbMoO_4:Nd〜(3+)晶体中电荷补偿缺陷形成的影响

获取原文
获取原文并翻译 | 示例
           

摘要

PbMoO_4:Nd~(3+) single crystals have been grown using different doping schemes. Their dielectric properties have been studied in the temperature range of 20-550°C at frequencies from 25 to 10~6 Hz. The activation energies of dielectric relaxation are determined for all samples, and the Nd_(3+) luminescence decay kinetics is studied. The most realistic models of activator centers in PbMoO_4:Nd~(3+) crystals are proposed based on the optical and dielectric spectroscopy data.
机译:已使用不同的掺杂方案生长了PbMoO_4:Nd〜(3+)单晶。在20至550°C的温度范围内,从25至10〜6 Hz的频率下研究了它们的介电性能。确定了所有样品的介电弛豫的激活能,并研究了Nd_(3+)发光衰减动力学。基于光学和介电谱数据,提出了PbMoO_4:Nd〜(3+)晶体中活化中心的最现实模型。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号