Static photoelasticity of gallium phosphide crystals

Mytsyk B.G.; Andrushchak A.S.; Kost Ya.P.

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Static photoelasticity of gallium phosphide crystals

机译：磷化镓晶体的静态光弹性

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The piezo-optic effect (POE) in cubic GaP crystals (symmetry class 4?3) is studied in detail by interferometry. The relations for determining the absolute piezo-optic coefficients (POCs) π _(im) or their combinations on a sample of X/45° cut at all allowable geometries of the experiment are recorded. The determination of a specific coefficient π _(im) at different experimental geometries on samples of right cuts and a X/45° cut made it possible to find the π _(im) values with a high accuracy and reliability.

机译：通过干涉法详细研究了立方GaP晶体（对称等级4？3）中的压电效应（POE）。记录用于确定在实验的所有允许几何形状的X / 45°切割样品上的绝对压电系数（POC）π_（im）或其组合的关系。通过对右切和X / 45°切角的样品在不同的实验几何结构上确定比系数π_（im），可以高精度和可靠地找到π_（im）值。

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《Crystallography reports》 |2012年第1期|共7页
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Mytsyk B.G.; Andrushchak A.S.; Kost Ya.P.;
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正文语种 eng
中图分类晶体学;
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1. Static photoelasticity of gallium phosphide crystals [J] . Mytsyk B.G., Andrushchak A.S., Kost Ya.P. Crystallography reports . 2012,第1期

机译：磷化镓晶体的静态光弹性
2. Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode [J] . Hiroki Hamada Materials . 2017,第8期

机译：镓铟磷化物的表征及铝镓磷化物体系量子阱激光二极管的研究进展
3. Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode [J] . Hiroki Hamada Materials . 2017,第8期

机译：镓铟磷化物的表征及铝镓磷化物体系量子阱激光二极管的研究进展
4. Improved efficiency of photovoltaic cell based on indium-phosphide-oxide, indium-phosphide, indium-gallium arsenide and indium-gallium-antimonide [C] . Barua Soumen, Abdulla-Al-Galib Mir, Salam K. M. A., 2012 2nd International Conference on Developments in Renewable Energy Technology . 2012

机译：基于磷化铟氧化物，磷化铟，砷化铟镓镓和锑化铟镓镓的光伏电池效率的提高
5. Organometallic vapor-phase epitaxial growth and characterization of III-V semiconductor alloys emitting visible light: Gallium arsenic phosphide, gallium indium phosphide, and aluminum gallium indium phosphide. [D] . Cao, Diansheng. 1991

机译：发出可见光的III-V半导体合金的有机金属气相外延生长和表征：磷化砷化镓，磷化铟镓和磷化铝镓铟。
6. Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode [O] . Hiroki Hamada 2017

机译：镓铟磷化物的表征及铝镓磷化物体系量子阱激光二极管的研究进展
7. Study of the effect of bismuth electrophysical properties of gallium phosphide single crystals [O] . 2020

机译：磷化镓单晶铋电神法性质的影响研究
8. Development of Techniques for Preparing High-Purity Single-Crystal Gallium Phosphide and Alloys of Gallium Phosphide and Indium Phosphide [R] . Miller, J. F., Bate, R. T., Gorton, H. C., 1961

机译：高纯度单晶镓磷化物及磷化镓和磷化铟合金制备技术的发展

Static photoelasticity of gallium phosphide crystals

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