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首页> 外文期刊>Nano Energy >The high-speed ultraviolet photodetector of ZnO nanowire Schottky barrier based on the triboelectric-nanogenerator-powered surface-ionic-gate
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The high-speed ultraviolet photodetector of ZnO nanowire Schottky barrier based on the triboelectric-nanogenerator-powered surface-ionic-gate

机译：ZnO纳米线肖特基屏障的高速紫外光探测器基于摩擦纳米料水管供电的表面离子栅极

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摘要

Nanowires have a high specific surface area and high surface activity, and the surface states are key factors controlling the nanowire Schottky barrier. Therefore, adjusting the surface states is an important strategy for developing high-performance electronic and optoelectronic devices based on nanowire Schottky barriers. Here, a surface-ionic-gate modulation technique was developed to modulate the surface states and Schottky barrier of nanowires, based on the gas discharge induced by triboelectric nanogenerators (TENGs). It is demonstrated that the Schottky barrier height and electrical transport characteristics of the Ag/ZnO nanowires can be modulated by effectively controlling the surface states. The experimental results from different atmospheres show that O-2(-) ions and electrons generated by gas discharge can form local ions on nanowires surface, which is the source for modulating surface states. Reversible modulation of the surface states and barrier height could be achieved by combining the surface-ionic-gate modulation with ultraviolet (UV) light. In addition, the recovery time of the ZnO nanowire Schottky barrier UV photodetector was reduced from 87 s to 0.3 s using the surface-ionic-gate modulation technique, the recovery speed increased 290 times, making it a universal method for achieving fast UV detection in different environments, such as in air, in oxygen, and in nitrogen. The TENG-based surface-ionicgate modulation technique proposed here can modulate the surface states of nanowires in real time and in situ. This provides a novel method to study the dynamic generation and relaxation process of surface states and to develop high-performance electronic and optoelectronic nanodevices with broad application prospects.
机译：纳米线具有高比表面积和高表面活性，并且表面状态是控制纳米线肖特基屏障的关键因素。因此，调整表面状态是基于纳米线肖特基屏障开发高性能电子和光电器件的重要策略。这里，开发了一种表面离子栅极调制技术以调节纳米线的表面状态和肖特基势垒，基于摩擦电纳米能器（Tengs）诱导的气体放电。结果证明，通过有效地控制表面状态，可以调节AG / ZnO纳米线的肖特基势垒高度和电气传输特性。来自不同气氛的实验结果表明，由气体放电产生的O-2（ - ）离子和电子可以在纳米线表面上形成局部离子，这是调节表面状态的源极。通过将表面离子栅极调制与紫外线（UV）光相结合，可以实现表面状态和屏障高度的可逆调制。另外，ZnO纳米线肖特基势垒UV光电探测器的恢复时间从87秒降低到0.3秒，恢复速度增加290倍，使其成为实现快速UV检测的通用方法不同的环境，例如空气，氧气和氮气中。这里提出的基于龄的表面离子化调制技术可以实时和原位地调节纳米线的表面状态。这提供了一种研究表面状态的动态生成和放松过程的新方法，并开发具有广泛应用前景的高性能电子和光电纳米型。

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  • 来源
    《Nano Energy》 |2019年第2019期|共9页
  • 作者

    Yang Feng; Zheng Mingli; Zhao Lei; Guo Junmeng; Zhang Bao; Gu Guangqin; Cheng Gang; Du Zuliang;

  • 作者单位

    Henan Univ Natl &

    Local Joint Engn Res Ctr High Efficiency D Collaborat Innovat Ctr Nano Funct Mat &

    Applicat Sch Mat Sci &

    Engn Key Lab Special Funct Mat Mini Kaifeng 475004 Peoples R China;

    Henan Univ Natl &

    Local Joint Engn Res Ctr High Efficiency D Collaborat Innovat Ctr Nano Funct Mat &

    Applicat Sch Mat Sci &

    Engn Key Lab Special Funct Mat Mini Kaifeng 475004 Peoples R China;

    Henan Univ Natl &

    Local Joint Engn Res Ctr High Efficiency D Collaborat Innovat Ctr Nano Funct Mat &

    Applicat Sch Mat Sci &

    Engn Key Lab Special Funct Mat Mini Kaifeng 475004 Peoples R China;

    Henan Univ Natl &

    Local Joint Engn Res Ctr High Efficiency D Collaborat Innovat Ctr Nano Funct Mat &

    Applicat Sch Mat Sci &

    Engn Key Lab Special Funct Mat Mini Kaifeng 475004 Peoples R China;

    Henan Univ Natl &

    Local Joint Engn Res Ctr High Efficiency D Collaborat Innovat Ctr Nano Funct Mat &

    Applicat Sch Mat Sci &

    Engn Key Lab Special Funct Mat Mini Kaifeng 475004 Peoples R China;

    Henan Univ Natl &

    Local Joint Engn Res Ctr High Efficiency D Collaborat Innovat Ctr Nano Funct Mat &

    Applicat Sch Mat Sci &

    Engn Key Lab Special Funct Mat Mini Kaifeng 475004 Peoples R China;

    Henan Univ Natl &

    Local Joint Engn Res Ctr High Efficiency D Collaborat Innovat Ctr Nano Funct Mat &

    Applicat Sch Mat Sci &

    Engn Key Lab Special Funct Mat Mini Kaifeng 475004 Peoples R China;

    Henan Univ Natl &

    Local Joint Engn Res Ctr High Efficiency D Collaborat Innovat Ctr Nano Funct Mat &

    Applicat Sch Mat Sci &

    Engn Key Lab Special Funct Mat Mini Kaifeng 475004 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 能源与动力工程;
  • 关键词

    Triboelectric nanogenerator; ZnO nanowire; Schottky barrier; Surface states; Surface-ionic-gate; UV photodetector;

    机译：摩擦纳米料;ZnO纳米线;肖特基障碍;表面状态;表面离子栅极;UV光电探测器;

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