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Electronic Properties of Silicene Films Subjected to Neutron Transmutation Doping

机译：硅膜的电子性质进行中子嬗变掺杂

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The radiation doping of single-crystal silicon with phosphorus retains the structure of the sample, reduces internal stresses, and increases the lifetime of minority charge carriers. The study is concerned with the effect of phosphorus additives on the electronic properties of silicene. The electron density-of-states spectra of a phosphorus-doped single layer and 2 x 2 bilayer silicene on a graphite substrate are calculated by the quantum-mechanical method. The carbon substrate imparts semiconductor properties to silicene due top-phybridization. Doping with phosphorus can retain or modify the metal properties gained by silicene. The position of phosphorus dopant atoms in silicene influences the semiconductor-conductor transition. The theoretical specific capacity of a phosphorus-doped silicene electrode decreases, and the electrode becomes less efficient for application in lithium-ion batteries. However, the increase in the conductivity is favorable for use of this material in solar cells.
机译：具有磷的单晶硅的辐射掺杂保持样品的结构，减少内部应力，并增加少数屈服载体的寿命。该研究涉及磷添加剂对硅的电子性质的影响。通过量子机械方法计算磷掺杂的单层和2×2双层硅硅的电子密度的光谱。碳基材将半导体性能赋予硅基由于顶部植物的硅。用磷掺杂可以保留或改变通过硅获得的金属性质。硅掺杂剂原子在硅片中的位置影响半导体导体转变。磷掺杂硅电极的理论特异性降低，并且电极在锂离子电池中施加效率较低。然而，导电性的增加有利于这种材料在太阳能电池中使用。

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