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首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >An AlGaN/GaN HEMT by the periodic pits in the buffer layer
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An AlGaN/GaN HEMT by the periodic pits in the buffer layer

机译：通过缓冲层中的周期凹坑的AlGaN / GaN HEMT

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摘要

In this paper, an AlGaN/GaN high electron mobility transistor (HEMT) by the periodic pits in the end of the buffer layer (PPB-HEMT) is proposed. The main focus of this proposed structure is based on controlling the carrier concentration and uniformity of the electric field distribution in the two dimensional electron gas (2DEG) channel layer that improves the breakdown voltage. The carrier concentrations fall under the gate by making periodic pits in the end of the buffer layer in the PPB-HEMT structure. Then, the electric field value reduces across the 2DEG channel layer and the electric field obtains the critical value at a higher drain-source voltage. Accordingly, the breakdown voltage of the PPB-HEMT improves approximately 32% compared to a conventional HEMT (C-HEMT). Consequently, the maximum output power density of the PPB-HEMT increases by 21% compared to the C-HEMT. Also, the depletion region width across the channel under the gate increases in the PPB-HEMT, and the gate-drain capacitance of the proposed structure decreases by 77% compared to the conventional structure. Therefore, the cut-off frequency of the PPB-HEMT improves by 50% compared to the C-HEMT due to the reduction in gate-drain capacitance. In addition, the current gain, unilateral power gain, and the maximum available power gain of the proposed structure increase. Therefore, the use of PPB-HEMT is more appropriate than the C-HEMT in high power and high frequency applications.
机译：在本文中，提出了通过缓冲层（PPB-HEMT）末端的周期凹坑的AlGaN / GaN高电子迁移率晶体管（HEMT）。该提出的结构的主要焦点是基于控制推出击穿电压的二维电子气体（2deg）通道层中的电场分布的载流子分布的均匀性。通过在PPB-HEMT结构中的缓冲层的末端进行周期凹坑，载体浓度落在栅极下方。然后，在2DEG信道层中减小电场值，并且电场在较高的漏极源电压下获得临界值。因此，与常规HEMT（C-HEMT）相比，PPB-HEMT的击穿电压提高了约32％。因此，与C-HEMT相比，PPB-HEMT的最大输出功率密度增加了21％。而且，与传统结构相比，PPB-HEMT下方的栅极下方的渗出区域宽度增加，并且所提出的结构的栅极 - 漏极电容减小了77％。因此，由于栅极 - 漏极电容的减小，PPB-HEMT的截止频率与C-HEMT相比提高了50％。此外，当前增益，单侧功率增益以及所提出的结构的最大可用功率增益增加。因此，使用PPB-HEMT比高功率和高频应用中的C-HEMT更合适。

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