Clusters of Spikes in CMOS Image Sensors Irradiated by Protons and Neutrons

Ivanov N. A.; Lobanov O. V.; Pashuk V. V.; Prygunov M. O.; Sizova K. G.

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Clusters of Spikes in CMOS Image Sensors Irradiated by Protons and Neutrons

机译：由质子和中子照射CMOS图像传感器的尖峰簇

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The distribution of pixels with high-value dark current in CMOS image sensors irradiated by protons with the energy of 1000 MeV and neutrons with a continuous spectrum simulating the energy spectrum of atmospheric neutrons is explored. Data on generation of spike clusters in the irradiated sensors and the exposure time influence on the cluster parameters are obtained.

机译：探讨了具有1000 meV和中子的质子照射的高值暗电流的像素的分布，具有连续频谱模拟大气中子的能谱。获得了关于照射传感器中的尖峰簇的数据和对集群参数的曝光时间影响。

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《Technical physics letters: Letters to the Russian journal of applied physics》 |2018年第11期|共3页
作者
Ivanov N. A.; Lobanov O. V.; Pashuk V. V.; Prygunov M. O.; Sizova K. G.;
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作者单位

Kurchatov Inst Natl Res Ctr BP Konstantinov Petersburg Nucl Phys Inst Gatchina 188300 Leningrad Oblas Russia;

Kurchatov Inst Natl Res Ctr BP Konstantinov Petersburg Nucl Phys Inst Gatchina 188300 Leningrad Oblas Russia;

Kurchatov Inst Natl Res Ctr BP Konstantinov Petersburg Nucl Phys Inst Gatchina 188300 Leningrad Oblas Russia;

LLC O2 Svetovye Sistemy St Petersburg 196088 Russia;

LLC NPC Granat St Petersburg 194021 Russia;

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正文语种 eng
中图分类工程物理学;物理学;
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1. Clusters of Spikes in CMOS Image Sensors Irradiated by Protons and Neutrons [J] . Ivanov N. A., Lobanov O. V., Pashuk V. V., Technical physics letters: Letters to the Russian journal of applied physics . 2018,第11期

机译：由质子和中子照射CMOS图像传感器的尖峰簇
2. Dark Current Spectroscopy in Neutron, Proton and Ion Irradiated CMOS Image Sensors: From Point Defects to Clusters [J] . Jean-Marc Belloir, Vincent Goiffon, Cédric Virmontois, Nuclear Science, IEEE Transactions on . 2017,第1期

机译：中子，质子和离子辐照CMOS图像传感器中的暗电流光谱：从点缺陷到簇
3. Displacement Damage Effects Due to Neutron and Proton Irradiations on CMOS Image Sensors Manufactured in Deep Submicron Technology [J] . Virmontois C.Goiffon V.Magnan P.Girard S.Inguimbert C.Petit S.Rolland G.Saint-Pe O. Nuclear Science, IEEE Transactions on . 2010,第6期

机译：中子和质子辐射对深亚微米技术制造的CMOS图像传感器产生的位移损伤效应
4. Evaluation of lOMeV Proton Irradiation on 5.5 Mpixel Scientific CMOS Image Sensor [C] . Paul Vu, Boyd Fowler, Brian Rodricks, Sensors, systems, and next-generation satellites XIV . 2010

机译：5.5 Mpixel科学型CMOS图像传感器对lOMeV质子辐照的评估
5. A time-to-first-spike CMOS image sensor. [D] . Qi, Xin. 2004

机译：首次曝光的CMOS图像传感器。
6. Proton Radiation Effects on Dark Signal Distribution of PPD CMOS Image Sensors: Both TID and DDD Effects [O] . Yuanyuan Xue, Zujun Wang, Wei Chen, 2017

机译：质子辐射对PPD CMOS图像传感器暗信号分布的影响：TID和DDD效应
7. Dark Current Spectroscopy in neutron, proton and ion irradiated CMOS Image Sensors: from Point Defects to Clusters [O] . Belloir Jean-Marc, Goiffon Vincent, Raine Mélanie, 2016

机译：中子，质子和离子辐照CMOS图像传感器中的暗电流光谱：从点缺陷到簇

Clusters of Spikes in CMOS Image Sensors Irradiated by Protons and Neutrons

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