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首页> 外文会议>Sensors, systems, and next-generation satellites XIV >Evaluation of lOMeV Proton Irradiation on 5.5 Mpixel Scientific CMOS Image Sensor
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Evaluation of lOMeV Proton Irradiation on 5.5 Mpixel Scientific CMOS Image Sensor

机译：5.5 Mpixel科学型CMOS图像传感器对lOMeV质子辐照的评估

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摘要

We evaluate the effects of 10 MeV proton irradiation on the performance of a 5.5 Mpixel scientific grade CMOS image sensor based on a 5T pixel architecture with pinned photodiode and transfer gate. The sensor has on-chip dual column level amplifiers and 11-bit single slope analog to digital converters (ADC) for high speed readout and wide dynamic range. The operation of the sensor is programmable and controlled by on-chip digital control modules. Since the image sensor features two identical halves capable of operating independently, we used a mask to expose only one half of the sensor to the proton beam, leaving the other half intact to serve as a reference. In addition, the pixel array and the digital logic control section were irradiated separately, at dose rates varying from 4 rad/s to 367 rad/s, for a total accumulated dose of 146 krad(Si) to assess the radiation effects on these key components of the image sensor. We report the resulting damage effects on the performance of the sensor including increase in dark current, temporal noise, dark spikes, transient effects and latch-up. The dark signal increased by about 55 e-/pixel after exposure to 14 krad (Si) and the dark noise increased from about 2.75e- to 6.5e-. While the number of hot pixels increased by 6 percent and the dark signal non uniformity degraded, no catastrophic failure mechanisms were observed during the tests, and the sensor did not suffer from functional failures.
机译：我们评估了10 MeV质子辐照对基于5T像素架构，带有固定光电二极管和传输门的5.5 Mpixel科学级CMOS图像传感器性能的影响。该传感器具有片上双列电平放大器和11位单斜率模数转换器（ADC），可实现高速读数和宽动态范围。传感器的操作是可编程的，并由片上数字控制模块控制。由于图像传感器具有可独立操作的两个相同的半部，因此我们使用了遮罩，仅将传感器的一半暴露于质子束，而另一半则完好无损，可以用作参考。此外，分别以4 rad / s至367 rad / s的剂量率分别照射像素阵列和数字逻辑控制部分，以累积总剂量146 krad（Si），以评估这些按键上的辐射效果图像传感器的组件。我们报告了由此产生的对传感器性能的损坏影响，包括暗电流，时间噪声，暗尖峰，瞬态效应和闩锁的增加。暴露于14 krad（Si）后，暗信号增加了约55 e- /像素，并且暗噪声从约2.75e-增加到6.5e-。虽然热像素的数量增加了6％，并且暗信号的不均匀性降低了，但是在测试过程中没有观察到灾难性的故障机制，并且传感器没有遭受功能故障的困扰。

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