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首页> 外文期刊>Protoplasma: An International Journal of Cell Biology >Nano-silicon alters antioxidant activities of soybean seedlings under salt toxicity
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Nano-silicon alters antioxidant activities of soybean seedlings under salt toxicity

机译:纳米硅改变盐毒性下大豆幼苗的抗氧化活性

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Materials with a particle size less than 100 nm are classified as nano-materials. The physical and chemical properties of nano-materials can vary considerably from those of bulk materials of the same composition. Silicon (Si) still fails to get recognized as an essential nutrient for plant growth and development, however the beneficial effects in terms of growth, biotic and abiotic stress resistance have been indicated in a variety of plant species for their growth. The aim of this study was to investigate the effects of different nano-silicon rates on the growth and antioxidant activities of soybean (Glycine max L. cv. M7) under salt stress. The results showed that salinity decreased shoot and root dry weight, potassium (K+) concentration in the root and leaf; however, increased sodium (Na+) concentration, catalase, peroxidase, ascorbate peroxidase and superoxide dismutase activities, phenolic components, ascorbic acid and alpha-tocopherol contents, lipid peroxidation, hydrogen peroxide, and oxygen radical's concentration. Between the treatments, 0.5 and 1 mM of nanosilicon oxide (nano-SiO2) improved shoot and root growth of seedlings. In contrast, a foliar application of SiO2 at 2 mM reduced the soybean growth. Overall, exogenous nano-silicon alleviated the salt stress by increase in K+ concentration, antioxidant activities, non-enzymatic compounds and decreasing of Na+ concentration, lipid peroxidation, and reactive oxygen species production.
机译:粒径小于100nm的材料被分类为纳米材料。纳米材料的物理和化学性质可以与相同组成的散装材料的物理和化学性质相当差异。硅(Si)仍然没有被认为是植物生长和发展的必要营养素,然而在各种植物物种中表明了生长,生物和非生物胁迫抗性方面的有益效果。本研究的目的是研究不同纳米硅率对大豆(甘氨酸Max L.CV.M7)在盐胁迫下的生长和抗氧化活性的影响。结果表明,盐度降低了根和叶中的枝条和根系干重,钾(K +)浓度;然而,增加钠(Na +)浓度,过氧化氢酶,过氧化物酶,抗坏血酸过氧化物酶和超氧化物歧化酶活性,酚类组分,抗坏血酸和α-生育酚含量,脂质过氧化,过氧化氢和氧自由基的浓度。在治疗中,0.5和1mm的纳米硅(纳米SiO 2)改善幼苗的芽和根生长。相反,SiO2的叶面施用在2 mm下降低了大豆生长。总体而言,外源纳米硅通过k +浓度,抗氧化活性,非酶化合物的增加,降低Na +浓度,脂质过氧化和反应性氧物种生产而减轻了盐胁迫。

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