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首页> 外文期刊>Journal of Low Power Electronics >Complementary Metal Oxide Semiconductor Amplifier Behaviour Considering Different Points of Electromagnetic Interference Injection
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Complementary Metal Oxide Semiconductor Amplifier Behaviour Considering Different Points of Electromagnetic Interference Injection

机译：考虑不同点电磁干扰注射点的互补金属氧化物半导体放大器行为

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In this paper the CMOS amplifier behaviour has been further investigated respect to the previous works in the literature. An exhaustive scenario for the EMI pollution has been considered: the injected interferences can indeed directly reach the amplifier pins or can be coupled fromthe PCB ground. This is a key point for evaluating also the susceptibility from the EMI coupled to the output pin, which is disclosed as a critical point. The investigated topologies are basically derived from the Miller and the Folded Cascode, which are well-known and widely used by the CMOSanalog designers; all of them are re-designed in UMC 180 nm CMOS process in order to have a fair comparison.
机译：在本文中，CMOS放大器行为进一步研究了对文献中的先前作品。 已经考虑了EMI污染的详尽方案：注入的干扰确实可以直接到达放大器引脚，或者可以从PCB接地耦合。 这是用于评估从耦合到输出引脚的EMI的易感性的关键点，其被公开为临界点。 调查的拓扑基本上基本上来自于米勒和折叠的CASCODE，其是CMOSANALOG设计人员的众所周知的和广泛应用的码头; 所有这些都在UMC 180 NM CMOS过程中重新设计，以进行公平的比较。

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