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首页> 外文期刊>Journal of Nanoelectronics and Optoelectronics >Impact of Back Barrier with Back Gate on Device Performance of AIGaN/GaN DG-HEMT
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Impact of Back Barrier with Back Gate on Device Performance of AIGaN/GaN DG-HEMT

机译：后屏与后栅的影响AIGAN / GAN DG-HEMT的设备性能

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摘要

In the present work, we have discussed the impact of AIGaN back barrier layer with back gate device performances of 0.5 mu m gate length AIGaN/GaN double gate high electron mobility transistor (DG-HEMT) device. The intention of the back barrier layer to improve the carrier confinement into the channel and at the same time realized the excellent high-frequency performance of the device, The impact of back barrier layer thickness due to the presence of the back gate is carried out by using 2-D Atlas Silvaco TCAD numerical simulation tool. Due to a large amount of two dimensional electron gas(2-DEG) density at AIGaN/GaN heterointerface, high drain current density obtained. The 2-D simulation is carried out by barring the back-barrier layer in terms of carrier concentration, transfer characteristics threshold voltage, transconductance, DIBL, gate current, gate capacitance and the cut-off frequency of AIGaN/GaN DG-HEMT device. The results obtained by variation of AIGaN back barrier layer thickness can be a better solution future analog and RF device application.
机译：在本作工作中，我们已经讨论了与0.5μm栅极长度Aigan / GaN双栅极高电子迁移率晶体管（DG-HEMT）装置的后栅设备执行的AIGAN背部阻挡层的影响。后屏障层的意图改善载体限制进入通道，同时实现了器件的优异高频性能，由背栅的存在引起的后屏蔽层厚度的影响使用2-D Atlas Silvaco TCAD数值模拟工具。由于AIGAN / GaN异色面的大量二维电子气体（2-DEG）密度，获得的高漏极电流密度。通过在载流子浓度，传递特性阈值电压，跨导，DIBL，栅极电流，栅极电容和AIGAN / GaN DG-HEMT装置的截止频率方面来执行2-D仿真。通过AIGAN背部阻挡层厚度变化获得的结果可以是更好的解决方案未来模拟和RF器件应用。

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