• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >A high responsivity and controllable recovery ultraviolet detector based on a WO3 gate AlGaN/GaN heterostructure with an integrated micro-heater
【24h】

A high responsivity and controllable recovery ultraviolet detector based on a WO3 gate AlGaN/GaN heterostructure with an integrated micro-heater

机译：基于WO3栅极AlGaN / GaN异质结构的高响应性和可控回收紫外线探测器，具有集成的微加热器

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

A high responsivity and controllable recovery ultraviolet (UV) photodetector based on a tungsten oxide (WO3) gate AlGaN/GaN heterostructure with an integrated micro-heater is reported for the first time. The WO3 nanolayer was deposited by physical vapor deposition (PVD) for deep UV absorption and the micro-heater was integrated for chip level heating and cooling. Our device when exposed to UV wavelength exhibits a high responsivity of 1.67 x 10(4) A W-1 at 240 nm and a sharp cut-off wavelength of 275 nm. More importantly, the persistent photoconductivity (PPC) effect can be eliminated by a novel method, mono-pulse heating reset (MHR), which consists in applying an appropriate pulse voltage to the micro-heater right after the removal of the UV illumination. The recovery time was reduced from hours to just seconds without reducing the high responsivity and stability of the photodetector. The UV detection, high responsivity, high stability, controllable recovery process and low production cost of GaN-based photodetectors make these devices extremely attractive for several applications, such as fire detection and missile and rocket warning.
机译：首次报道基于氧化钨（WO3）浇口AlGaN / GaN异质结构的高响应性和可控回收紫外（UV）光电探测器与集成微加热器报告。通过物理气相沉积（PVD）沉积WO3纳米，用于深紫外吸收，并且微加热器集成为芯片水平加热和冷却。当暴露于UV波长时，我们的装置在240nm处具有1.67×10（4）个W-1的高响应度，并且尖锐的截止波长为275nm。更重要的是，可以通过新的方法，单脉冲加热复位（MHR）来消除持续光电导性（PPC）效应，其包括在移除UV照明之后向微加热器施加适当的脉冲电压。恢复时间从小到几秒钟降低，而不降低光电探测器的高响应度和稳定性。 UV检测，高响应度，高稳定性，可控恢复过程和GAN的光电探测器的低生产成本使这些器件对多种应用具有极大的吸引力，例如火灾探测和导弹和火箭警告。

著录项

  • 来源
  • 作者

    Sun Jianwen; Zhang Shuo; Zhan Teng; Liu Zewen; Wang Junxi; Yi Xiaoyan; Li Jinmin; Sarro Pasqualina M.; Zhang Guoqi;

  • 作者单位

    Delft Univ Technol Dept Microelect NL-2628 CD Delft Netherlands;

    Chinese Acad Sci Res &

    Dev Ctr Solid State Lighting Inst Semicond Qinghua East Rd 35A Beijing 100083 Peoples R China;

    Chinese Acad Sci Res &

    Dev Ctr Solid State Lighting Inst Semicond Qinghua East Rd 35A Beijing 100083 Peoples R China;

    Tsinghua Univ Inst Microelect Beijing 100084 Peoples R China;

    Chinese Acad Sci Res &

    Dev Ctr Solid State Lighting Inst Semicond Qinghua East Rd 35A Beijing 100083 Peoples R China;

    Chinese Acad Sci Res &

    Dev Ctr Solid State Lighting Inst Semicond Qinghua East Rd 35A Beijing 100083 Peoples R China;

    Chinese Acad Sci Res &

    Dev Ctr Solid State Lighting Inst Semicond Qinghua East Rd 35A Beijing 100083 Peoples R China;

    Delft Univ Technol Dept Microelect NL-2628 CD Delft Netherlands;

    Delft Univ Technol Dept Microelect NL-2628 CD Delft Netherlands;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 物理化学（理论化学）、化学物理学;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号