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首页> 外文期刊>Journal of Materials Engineering and Performance >Fabrication of Silicon Nanowire Forests for Thermoelectric Applications by Metal-Assisted Chemical Etching
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Fabrication of Silicon Nanowire Forests for Thermoelectric Applications by Metal-Assisted Chemical Etching

机译：用金属辅助化学蚀刻制造热电应用的硅纳米线林

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Silicon nanowires, whose thermal conductivity is strongly reduced with respect to that of the bulk silicon, are very promising for high-efficient thermoelectric conversion. This work focuses on the development of a technique for the fabrication of thermoelectric generators which are based on vertical silicon nanowire forests, achieved through a metal-assisted chemical etch. As heavily doped nanowires are essential in thermoelectric applications, this chemical process has been applied both on lightly and on highly doped (10(19)cm(-3)) silicon substrates. A comparison of the results shows that the etch behaves in a completely distinct way when applied to the differently doped substrates. The results of this comparison and a preliminary insight into the diverse behavior occurred are reported. The different initial nucleation of silver, which determines the hole injection, essential to the etching of silicon, seems to be the key point of this different behavior.
机译：硅纳米线，其导热率相对于散装硅的热导电率强烈降低，对于高效的热电转换非常有前途。 这项工作侧重于开发用于制造基于垂直硅纳米线森林的热电发电机的技术，通过金属辅助化学蚀刻实现。 由于掺杂的纳米线在热电应用中是必不可少的，这种化学过程在轻微和高度掺杂（＆ 10（19）cm（-3））硅基板上。 结果的比较表明，当施加到不同掺杂的基板时，蚀刻以完全不同的方式行事。 报告了这种比较的结果和对不同行为的初步洞察。 不同的初始成核银，这决定了对硅的蚀刻必不可少的空穴注入，似乎是这种不同行为的关键点。

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