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Liquid Phase Epitaxy of Gallium Nitride

机译：氮化镓液相外延

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In this work, liquid phase epitaxy of gallium nitride (GaN) has been achieved using pulsed plasma nitridation of molten Ga films. Typically, continuous exposure of Ga to nitrogen plasma results in the formation of a thick GaN crust that prevents the growth of GaN layers on GaN seeds or GaN-on-sapphire substrates. The GaN crust formation on molten Ga is a consequence of a high concentration of dissolved nitrogen at the top surface of molten Ga layers. Here, we present the concept of using pulse (on/off) sequences to control the concentration of nitrogen inside the melt and enable the growth of GaN at the molten Ga-substrate interface. Results showed that the technique allows for epitaxial growth on homosubstrates and promotes the growth of additional layers on the pre-existing seeds. High-resolution transmission electron microscopy characterization confirmed epitaxial growth of GaN. A mass transport model was developed to discuss the effect of bulk recombination, diffusion, and pulsing on the concentration of nitrogen into the molten Ga. Results indicated that pulsing favored both the recombination of radicals in the bulk and the diffusion of species into the metal compared to the dissolution of radicals. As a result, the concentration of nitrogen at the surface of the metal is decreased, while the concentration of nitrogen at the molten Ga-substrate interface is increased, which allows for liquid-phase epitaxy of GaN.
机译：在这项工作中，使用熔融GA膜的脉冲等离子体氮化已经实现了氮化镓（GaN）的液相外延。通常，Ga的连续暴露于氮血浆导致厚GaN地壳的形成，可防止GaN层对GaN种子或甘蓝基材的生长。熔融GA上的GaN地壳形成是熔融GA层顶表面的高浓度溶解的氮。在这里，我们介绍使用脉冲（开/关）序列的概念来控制熔体内的氮浓度，并使GaN在熔融Ga底座界面处的生长。结果表明，该技术允许家庭制态上的外延生长，并促进预先存在的种子上的其他层的生长。高分辨率透射电子显微镜表征证实了GaN的外延生长。开发了一种大规模运输模型以讨论体重重组，扩散和脉冲对熔融GA浓度的影响。结果表明，脉冲有助于体积的自由基的重组和物种扩散到金属中的扩散溶解激进。结果，金属表面处的氮的浓度降低，而熔融Ga衬底界面处的氮浓度增加，这允许GaN的液相外延。

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