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首页> 外文期刊>ACS applied materials & interfaces >One-Step Growth of Amorphous/Crystalline Ga2O3 Phase Junctions for High-Performance Solar-Blind Photodetection
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One-Step Growth of Amorphous/Crystalline Ga2O3 Phase Junctions for High-Performance Solar-Blind Photodetection

机译：用于高性能太阳盲光电检测的无定形/结晶GA2O3相结的一步生长

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摘要

The pursuit of high-performance photodetectors functioning in the solar-blind spectrum is motivated by both scientific and practical applications ranging from secure communication, monitoring, sensing, etc. In particular, the fabrication of heterojunctions based on the wide band gap semiconductors has emerged as an attractive strategy to promote the high-efficient photogenerated electron/hole pair separation. However, the precisely controlled growth of heterojunctions remains a huge challenge. The lattice mismatch leads to the formation of defects and/or dislocations at the interface, deteriorating the performance of devices and limiting their envisioned applications. Here, we demonstrate a simple one-step growth of amorphous/crystalline Ga2O3 phase junctions by using sputtering technique, yielding a large responsivity of 0.81 A/W, a superior photo-to-dark current ratio over 10(7), and an ultrahigh response speed of similar to 12 ns. Compared to the previous reported solar-blind photodetectors, the obtained detectivity approximate to 5.67 x 10(14) Jones is increased by 2 orders of magnitude. Such excellent photoresponse characteristics can be understood by the interfacial built-in field-promoted electron/hole pair separation for the amorphous/crystalline Ga2O3 phase junctions. Our results provide a novel path toward realizing high-performance optoelectronics functioning in the solar-blind spectrum.
机译：在太阳盲光谱中运行的高性能光电探测器的追求是由科学和实用的应用来源于安全的通信，监测，传感等。特别是，基于宽带隙半导体的异质功能的制造已经出现为一种促进高效光发生电子/孔对分离的有吸引力的策略。然而，杂交功能的精确控制增长仍然是一个巨大的挑战。晶格错配导致界面处的缺陷和/或脱位形成，恶化器件的性能并限制其设想的应用。这里，我们通过使用溅射技术来证明无定形/结晶Ga2O3相结的简单的一步生长，从而产生0.81A / W的大响应率，优质的光照电流比为10（7），以及超高响应速度与12 ns相似。与先前报道的太阳盲光电探测器相比，所获得的检测率近似为5.67 x 10（14）琼斯增加了2个数量级。可以通过用于非晶/结晶Ga2O3相结的界面内置的现场促进的电子/空穴对分离来理解这种优异的光响应特性。我们的结果提供了一种在太阳盲光谱中实现高性能光电子功能的新型路径。

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  • 来源
    《ACS applied materials & interfaces》 |2019年第49期|共8页
  • 作者

    Wang Yuehui; Cui Wenjun; Yu Jie; Zhi Yusong; Li Haoran; Hu Zhi-Yi; Sang Xiahan; Guo Er-jia; Tang Weihua; Wu Zhenping;

  • 作者单位

    Beijing Univ Posts &

    Telecommun State Key Lab Informat Photon &

    Opt Commun Beijing 100876 Peoples R China;

    Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &

    Proc 122 Luoshi Rd Wuhan 430070 Hubei Peoples R China;

    Beijing Univ Posts &

    Telecommun State Key Lab Informat Photon &

    Opt Commun Beijing 100876 Peoples R China;

    Beijing Univ Posts &

    Telecommun State Key Lab Informat Photon &

    Opt Commun Beijing 100876 Peoples R China;

    Beijing Univ Posts &

    Telecommun State Key Lab Informat Photon &

    Opt Commun Beijing 100876 Peoples R China;

    Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &

    Proc 122 Luoshi Rd Wuhan 430070 Hubei Peoples R China;

    Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &

    Proc 122 Luoshi Rd Wuhan 430070 Hubei Peoples R China;

    Chinese Acad Sci Beijing Natl Lab Condensed Matter Phys Beijing 100190 Peoples R China;

    Beijing Univ Posts &

    Telecommun State Key Lab Informat Photon &

    Opt Commun Beijing 100876 Peoples R China;

    Beijing Univ Posts &

    Telecommun State Key Lab Informat Photon &

    Opt Commun Beijing 100876 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学工业;
  • 关键词

    Ga2O3; amorphous/crystalline phase junctions; solar-blind photodetection; one-step growth; responsivity; detectivity;

    机译：Ga2O3;非晶/晶相结合;太阳盲光电检修;一步生长;反应性;探测;

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