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首页> 外文期刊>ACS applied materials & interfaces >Locally Resolved Electron Emission Area and Unified View of Field Emission from Ultrananocrystalline Diamond Films
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Locally Resolved Electron Emission Area and Unified View of Field Emission from Ultrananocrystalline Diamond Films

机译：局部解析的电子排放区域和超晶金刚石薄膜的场发射统一视图

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摘要

In this paper, we study the effect of the actual, locally resolved, field emission area on electron emission characteristics of uniform planar conductive nitrogen-incorporated ultrananocrystalline diamond ((N)UNCD) field emitters. High resolution imaging experiments were carried out in a field emission microscope with a specialty imaging anode screen such that electron emission micrographs were taken concurrently with measurements of I- V characteristics. An automated image processing algorithm was applied to process the extensive imaging data sets and calculate the emission area per image. It was routinely found that field emission from as-grown planar (N)UNCD films was always confined to a counted number of discrete emitting centers across the surface, which varied in size and electron emissivity. It was established that the actual field emission area critically depends on the applied electric field and that the field emission area and overall electron emissivity improve with the sp(2)-fraction present in the Mm, irrespective of the original substrate roughness or morphology. Most importantly, when as-measured I-E characteristics were normalized by the electric field-dependent emission area, the resulting j-E curves demonstrated a strong kink and departed from the Fowler Nordheim law, finally saturating at a value on the order of 100 mA/cm(2). This value was nearly identical for all studied films regardless of substrate. It was concluded that the saturation value is specific to the-intrinsic fundamental properties of (N)UNCD:
机译：在本文中，我们研究了实际，局部分辨，场发射区域对均匀平面导电氮掺入超混晶金刚石（（n）UNC扩展）场发射器的电子发射特性的影响。高分辨率成像实验在现场发射显微镜中进行，具有特种成像阳极筛，使得电子发射显微照片同时进行I-V特性。应用自动图像处理算法来处理广泛的成像数据集并计算每个图像的发射区域。经常发现从生长的平面（n）的面膜（n）薄膜的场发射总是限制在整个表面上的分离的分离数量，这在尺寸和电子发射率方面变化。建立实际场发射区域批判性地取决于所施加的电场，并且场发射区域和整体电子发射率随着原始衬底粗糙度或形态学而存在的SP（2） - 倍。最重要的是，当通过电场依赖的排放区域标准化时，所得到的JE曲线呈现出强烈的扭结并落后于福勒诺海姆定律，最后以100mA / cm的值饱和（ 2）。对于所有研究的薄膜而言，该值几乎相同。得出结论，饱和值是特定于（n）UNC的内在基本属性：

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