A microwave method for determination of the recombination rate of nonequilibrium charge carriers in the bulk and at the surface of doped silicon wafers

O. G. Koshelev

首页> 外文期刊>Industrial Laboratory: Diagnostics of Materials >A microwave method for determination of the recombination rate of nonequilibrium charge carriers in the bulk and at the surface of doped silicon wafers

【24h】

A microwave method for determination of the recombination rate of nonequilibrium charge carriers in the bulk and at the surface of doped silicon wafers

机译：微波法测定掺杂硅片整体和表面非平衡电荷载流子的复合率

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

A method for determining the lifetime of nonequilibrium carriers and the surface recombination rate in a silicon wafer with strong microwave absorption is proposed. The method is based on the simultaneous measurement of the photoconduction relaxation times in transmission and reflection of microwave radiation.

机译：提出了一种在微波吸收强的硅晶片中确定非平衡载流子寿命和表面复合率的方法。该方法基于同时测量微波辐射的透射和反射中的光导弛豫时间。

著录项

来源
《Industrial Laboratory: Diagnostics of Materials》 |2000年第10期|共3页
作者
O. G. Koshelev;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类工程材料一般性问题;
关键词

相似文献

外文文献
中文文献
专利

1. A microwave method for determination of the recombination rate of nonequilibrium charge carriers in the bulk and at the surface of doped silicon wafers [J] . O. G. Koshelev Industrial Laboratory: Diagnostics of Materials . 2000,第10期

机译：微波法测定掺杂硅片整体和表面非平衡电荷载流子的复合率
2. A Microwave Method for Determination of the Recombination Rate of Nonequilibrium Charge Carriers in the Bulk and on the Surface of Alloyed Silicon Plates [J] . O.G. Koshelev Заводская лаборатория: Ежемес.науч.-техн. журн. по аналит. химии, физ., мат. и мех. методам исслед. материалов . 2000,第10期

机译：微波法测定合金化硅板整体和表面非平衡电荷载体的复合率
3. A Microwave Method for Determination of the Recombination Rate of Nonequilibrium Charge Carriers in the Bulk and on the Surface of Alloyed Silicon Plates [J] . O.G. Koshelev Заводская лаборатория: Ежемес.науч.-техн. журн. по аналит. химии, физ., мат. и мех. методам исслед. материалов . 2000,第10期

机译：用于测定散装中非纤维电荷载体的重组率和合金硅板表面的微波方法
4. Noncontact separate measurements of bulk lifetime and surface recombination velocities in silicon wafers with oxidized mirror, etched, sliced, and sandblasted surfaces [C] . International conference on defect recognition and image processing in semiconductors . 1996

机译：NonContact在硅晶片中的硅寿命和表面重组速度的非接触式单独测量，具有氧化镜，蚀刻，切片和砂刺的表面
5. Recombination dynamics in silicon-doped aluminum gallium nitride and ultraviolet light-emitting diodes grown on sapphire and bulk aluminum nitride substrates by metal-organic vapor-phase epitaxy [D] . Chen, Kaixuan 2008

机译：通过金属有机气相外延在蓝宝石和块状氮化铝衬底上生长的掺硅氮化铝镓和紫外发光二极管的复合动力学
6. Heavily-Doped Bulk Silicon Sidewall Electrodes Embedded between Free-Hanging Microfluidic Channels by Modified Surface Channel Technology [O] . Yiyuan Zhao, Henk-Willem Veltkamp, Thomas V. P. Schut, 2020

机译：通过改进的表面通道技术将重掺杂的块状硅侧壁电极嵌入到自由悬置的微流体通道之间
7. Diffusion model for bulk and surface recombination of free carriers in silicon wafer: I. Exact solution and bulk-lifetime evaluation [O] . 金田寛, 大村一郎 2017

机译：硅晶片中自由载体的本体和表面复合的扩散模型：I.精确溶液和本体寿命评估
8. Determination of surface recombination velocity and bulk lifetime in detector grade silicon and germanium crystals. [R] . Derhacobian, N., Fine, P., Walton, J. T., 1993

机译：检测器级硅和锗晶体中表面复合速度和体积寿命的测定。

A microwave method for determination of the recombination rate of nonequilibrium charge carriers in the bulk and at the surface of doped silicon wafers

摘要

著录项

相似文献

相关主题

期刊订阅