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Ferroelectric Gate FET Memory Based on Conduction of Ferroelectric-Insulator Interface

机译：基于铁电-绝缘子接口导通的铁电栅FET存储器

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摘要

A new type of ferroelectric gate field effect transistor (FET) using ferroelectric-insulator interface conduction has been proposed. Drain current flows along the interface between ferroelectric and insulator layers and needs no semiconductor. This FET consists of source and drain electrodes on ferroelectric film (Pb(Zr_(0.52)Ti_(0.48))O_3(PZT)) prepared on Pt/TiO_2/SiO_2/Si substrate, and gate electrode on HfO_2 insulator film on the PZT film between the source and the drain electrodes. Drain current flows through the interface of the ferroelectric and the insulator. Drain current versus gate voltage characteristics shows clockwise hysteresis loop similarly to the conventional p-channel FET with ferroelectric gate. The FET shows that the On/Off ratio of the conduction current is about 10~5 and the Off state current is about 10~(-10)A.
机译：提出了一种利用铁电-绝缘体界面导电的新型铁电栅场效应晶体管（FET）。漏极电流沿着铁电层和绝缘层之间的界面流动，不需要半导体。该FET由在Pt / TiO_2 / SiO_2 / Si衬底上制备的铁电薄膜（Pb（Zr_（0.52）Ti_（0.48））O_3（PZT）上的源电极和漏电极以及在PZT膜上的HfO_2绝缘膜上的栅电极组成在源极和漏极之间。漏电流流过铁电体和绝缘体的界面。漏极电流与栅极电压的关系曲线显示了顺时针方向的磁滞回线，类似于具有铁电栅极的传统p沟道FET。场效应管显示导通电流的开/关比约为10〜5，关态电流约为10〜（-10）A。

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