ELECTROABSORPTION OF UNSTRAINED InGaAs/InAlGaAs MULTIPLE QUANTUM WELL STRUCTURE GROWN ON GaAs SUBSTRATES

Ching-Ting Lee; Tzer-En Nee

首页> 外文期刊>International Journal of High Speed Electronics and Systems: Devices, Integrated Circuits and Systems, Optical and Quantum Electronics >ELECTROABSORPTION OF UNSTRAINED InGaAs/InAlGaAs MULTIPLE QUANTUM WELL STRUCTURE GROWN ON GaAs SUBSTRATES

【24h】

ELECTROABSORPTION OF UNSTRAINED InGaAs/InAlGaAs MULTIPLE QUANTUM WELL STRUCTURE GROWN ON GaAs SUBSTRATES

机译：GaAs衬底上生长的无约束InGaAs / InAlGaAs多量子阱结构的电吸附

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Large electroabsorption was observed in InGaAs/InAlGaAs multiple quantum well structures grown on GaAs substrates operating near 1.3 fan. The molecular beam epitaxy (MBE) growth of these structures was incorporation of a carefully designed InAlAs multistage strain-relaxed buffer. The optical absorption spectra as a function of the reverse bias at room temperature are shown. The good characteristics of the optical modulators fabricated on this structure have indicated its potential for practical applications of high-speed modulation.

机译：在运行于1.3风扇附近的GaAs衬底上生长的InGaAs / InAlGaAs多量子阱结构中观察到大的电吸收。这些结构的分子束外延（MBE）生长是通过精心设计的InAlAs多级应变松弛缓冲液而实现的。示出了在室温下作为反向偏置的函数的光吸收光谱。在这种结构上制造的光调制器的良好特性表明了其在高速调制的实际应用中的潜力。

著录项

来源
《International Journal of High Speed Electronics and Systems: Devices, Integrated Circuits and Systems, Optical and Quantum Electronics》 |1997年第4期|共12页
作者
Ching-Ting Lee; Tzer-En Nee;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词

相似文献

外文文献
中文文献
专利

1. ELECTROABSORPTION OF UNSTRAINED InGaAs/InAlGaAs MULTIPLE QUANTUM WELL STRUCTURE GROWN ON GaAs SUBSTRATES [J] . Ching-Ting Lee, Tzer-En Nee International Journal of High Speed Electronics and Systems: Devices, Integrated Circuits and Systems, Optical and Quantum Electronics . 1997,第4期

机译：GaAs衬底上生长的无约束InGaAs / InAlGaAs多量子阱结构的电吸附
2. Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250-1400-nm spectral range [J] . Egorov A. Yu., Karachinsky L. Ya., Novikov I. I., Semiconductors . 2016,第5期

机译：具有InAs / InGaAs量子阱的变质GaAs / InAlGaAs / InGaAs异质结构的光学性质，在1.250-1400 nm光谱范围内发光
3. Structural and optical properties of 0.98 um InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy [J] . Jin-Shung Liu, Jyh-Shyang Wang, K.Y. Hsieh Journal of Crystal Growth . 1999,第1a2期

机译：气源分子束外延生长0.98 um InGaAs / InGaAsP应变补偿多量子阱结构的结构和光学性质
4. Reduced lattice distortion in and near strain-compensated InGaAs/InGaAsP multiple-quantum well structures grown by metal-organic vapor phase epitaxy on GaAs substrates [C] . Hiramoto, K., Sagawa, Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on . 1995

机译：在GaAs衬底上通过金属-有机气相外延生长的应变补偿的InGaAs / InGaAsP多量子阱结构中和附近的晶格畸变减少
5. Optoelectronic devices based on low threshold strained InGaAs/GaAs quantum well lasers grown on structured substrates [D] . Frateschi, Newton Cesario 1993

机译：基于在结构化衬底上生长的低阈值应变InGaAs / GaAs量子阱激光器的光电器件
6. Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate [O] . Bilel Azeza, Mohamed Helmi Hadj Alouane, Bouraoui Ilahi, 2015

机译：硅衬底上直接生长的InAs / InGaAs / GaAs量子点太阳能电池
7. Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates [O] . Bhattacharya, Arnab, Mawst, Luke J., Nayak, Sabyasachi, 1996

机译：在Gaas衬底上通过金属有机化学气相沉积生长的InGaas / InGaasp / InGap量子阱激光二极管的界面结构

ELECTROABSORPTION OF UNSTRAINED InGaAs/InAlGaAs MULTIPLE QUANTUM WELL STRUCTURE GROWN ON GaAs SUBSTRATES

摘要

著录项

相似文献

相关主题

期刊订阅